Semiconductor Dicing Crack Control via Trench and Metal Film
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Solution Overview
Problem
During the dicing process of semiconductor wafers, material film peeling off from the substrate in the dicing region can lead to chip failure due to crack propagation from the dicing region to the device region, which existing methods fail to effectively prevent.
Innovation Solution
A trench is formed between the device and dicing regions, which caves in toward the substrate, and a first metal film is placed on the material film in the dicing region to induce and terminate cracks, preventing their propagation to the device region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dicing is performed to separate semiconductor chips, then chip production is achieved, but material film peeling occurs in the dicing region causing chip failure
Solution Approach 1:
The patent divides the semiconductor substrate into distinct regions by forming trenches between the device region and dicing region. This segmentation creates physical barriers that prevent crack propagation from the dicing region to the device region, thereby maintaining chip reliability while enabling production through dicing.
Solution Approach 2:
The patent introduces a metal film as an intermediary layer in the dicing region that serves as a crack stopper. This intermediate structure absorbs and terminates cracks during dicing, preventing them from reaching the device region and causing chip failure, thus resolving the contradiction between production and reliability.
2Ease of manufacture
If existing methods are used during dicing, then chip separation is achieved, but crack propagation occurs from dicing region to device region
Solution Approach 1:
The patent performs preliminary actions by forming trenches and metal films in the dicing region before the actual dicing process. These pre-formed structures serve as crack stoppers that will intercept and terminate cracks during dicing, preventing crack propagation to the device region while maintaining ease of chip separation.
Solution Approach 2:
The patent converts the harmful effect of crack propagation into a beneficial outcome by designing the metal film and trench structures to intentionally attract and terminate cracks. The cracks are redirected to stop at the metal film interface or trench boundaries, transforming the harmful crack propagation into a controlled crack termination mechanism that protects the device region.
Data Source
AI summary
A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.