Semiconductor Substrate Dicing to Protect Lower Surface Electrodes
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Solution Overview
Problem
Existing dicing methods for semiconductor devices, such as blade dicing, plasma dicing, and laser dicing, result in issues like burrs, metal contamination, and short circuits, which affect the reliability and functionality of semiconductor devices.
Innovation Solution
A manufacturing method combining plasma dicing to form initial gaps with specific widths, followed by blade dicing to create additional gaps, ensuring the lower surface electrode is not cut by blades, and selecting gap widths to minimize metal waste and contamination, thereby avoiding burrs and short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If blade dicing is used to separate semiconductor chips, then chip separation is achieved, but burrs and metal contamination occur on the lower surface electrode
Solution Approach 1:
The dicing process is divided into two distinct stages: first plasma dicing to create initial gaps without contacting the electrode, then blade dicing to complete separation. This segmentation allows each method to perform its optimal function without causing harm to the electrode.
Solution Approach 2:
Plasma dicing is performed as a preliminary action before blade dicing to create initial gaps and remove material from the lower surface. This preliminary removal of material prevents the blade from directly contacting and contaminating the electrode during the subsequent blade dicing step.
2Reliability
If plasma dicing is used to separate semiconductor chips, then no burrs are formed on the electrode, but metal waste and contamination still occur
Solution Approach 1:
The patent applies different dicing methods to different regions: plasma dicing is used where electrode protection is critical (creating initial gaps), while blade dicing is used in regions where metal waste is acceptable. This local differentiation optimizes the overall process by applying the right method to the right location.
3Productivity
If the lower surface electrode is cut by blades during dicing, then chip separation is completed, but short circuits occur due to metal contamination
Solution Approach 1:
Plasma dicing acts as an intermediary process between the initial state and final chip separation. It creates intermediate gaps and removes material without the blade directly contacting the electrode, thus mediating between the need for separation and the need to prevent contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method produces a highly reliable semiconductor device with reduced defects and improved functionality by minimizing burrs and short circuits, enhancing the overall performance and reliability of the semiconductor device.
Implementation Method 1
performing plasma dicing on a lower surface side of a semiconductor substrate to remove a lower surface of the semiconductor substrate, thereby forming first and second gaps
Data Source
AI summary
A semiconductor device includes: a substrate having a lower surface and a side surface and the substrate containing a semiconductor material; and an electrode provided on the lower surface, wherein the side surface has a first side surface portion, a second side surface portion provided on the first side surface portion, and a third side surface portion provided on the second side surface portion, the third side surface portion protrudes in a plane parallel to the lower surface more than the second side surface portion, and the first side surface portion protrudes in a plane parallel to the lower surface more than the third side surface portion.