Semiconductor Wafer Dicing with Selective Metal Pattern Removal
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Solution Overview
Problem
The challenge in manufacturing semiconductor devices is to cut semiconductor wafers with metal patterns in the dicing region without leaving debris, as the increasing density of metal patterns in a smaller area makes it difficult to cut the wafer effectively, leading to misalignment and potential damage during the cutting process.
Innovation Solution
The method involves selectively removing some columns of metal patterns in the dicing region while leaving others intact, using a combination of laser irradiation and machining to minimize damage and improve alignment, allowing for precise cutting without removing all metal patterns, thus preventing debris and enhancing the reliability of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If metal patterns are arranged at high density in the dicing region to accommodate more test pads, then the area utilization is improved, but the cutting precision deteriorates due to difficulty in removing all metal patterns without leaving debris
Solution Approach 1:
The patent extracts and removes only the necessary metal patterns (those in the first and second columns) from the dicing region while leaving other metal patterns (those in the third and fourth columns) intact. This selective removal approach allows for effective cutting without attempting to remove all metal patterns, thereby preventing debris while maintaining high area utilization.
Solution Approach 2:
The patent segments the metal patterns into different groups based on their column positions. The first and second columns are designated for removal, while the third and fourth columns are preserved. This segmentation strategy enables precise control over which patterns are removed, improving cutting precision without sacrificing area utilization.
2Object-generated harmful factors
If all metal patterns are removed from the dicing region, then debris is prevented, but the manufacturing complexity increases due to difficulty in complete removal
Solution Approach 1:
Instead of attempting to remove all metal patterns which would require complex manufacturing processes, the patent extracts only the essential patterns (first and second columns) that need to be removed for successful cutting. This reduces manufacturing complexity while still preventing debris effectively.
Solution Approach 2:
The patent applies partial action by removing only the necessary portion of metal patterns (first and second columns) rather than all patterns. This partial removal is sufficient to prevent debris and enable cutting, avoiding the excessive complexity that would result from attempting complete removal.
3Productivity
If the dicing region width is reduced to increase chip area, then productivity is improved, but the alignment margin deteriorates making cutting more difficult
Solution Approach 1:
By removing specific metal patterns (first and second columns) from the dicing region, the patent creates sufficient spacing and clearance that improves alignment margin. This allows for reduced dicing region width without compromising cutting alignment, thereby maintaining productivity.
Solution Approach 2:
The patent performs preliminary removal of metal patterns in the first and second columns before the cutting process. This preliminary action creates favorable conditions for subsequent cutting by ensuring adequate alignment margin, allowing the dicing region width to be reduced for increased productivity without sacrificing alignment precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability of semiconductor devices by preventing metal pattern damage and debris, reducing the risk of chipping or cracks, and increasing the alignment margin during the cutting process, resulting in more efficient and precise semiconductor chip production.
Implementation Method 1
a modified layer is formed by irradiating a semiconductor wafer with a laser beam
Data Source
AI summary
To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed.