Semiconductor Die Embedding in Penetrable Adhesive for Encapsulation Stability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices experience die shifting during encapsulation due to insufficient adhesive layers, leading to vertical or lateral movement and contamination issues during via formation, which affects electrical performance.

Innovation Solution

Embedding bumps formed over the semiconductor die into a penetrable adhesive layer to secure the die in place during encapsulation, reducing shifting and eliminating the need for forming vias over contact pads.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an adhesive layer is used to mount the semiconductor die to the carrier, then the die can be secured during packaging, but the adhesive layer may be insufficient to prevent die shifting during encapsulation

Engineering Contradiction:
Improvedie positioning stabilityVSAvoidadhesive layer holding force
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The adhesive layer is segmented by the bumps that protrude through it, creating discrete anchoring points. The bumps divide the adhesive layer into regions, with each bump acting as an independent anchor that prevents die shifting in different directions, thereby improving overall positioning stability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The bumps are nested within the adhesive layer, with portions of the bumps protruding through the adhesive layer. This nested configuration allows the bumps to be embedded in the adhesive while still providing external anchoring features that prevent die shifting during encapsulation.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If via formation is performed over contact pads to create electrical connections, then electrical performance can be achieved, but contamination occurs during the via formation process

Engineering Contradiction:
Improveelectrical connection qualityVSAvoidcontamination during via formation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The bumps are formed and embedded in the adhesive layer before the encapsulation process. This preliminary action establishes the electrical connection pathway in advance, eliminating the need for subsequent via formation operations that would otherwise contaminate the contact pads.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The need for via formation is extracted or removed from the process sequence. By using bumps that protrude through the encapsulant, the patent eliminates the harmful via formation step entirely, thereby preventing contamination of contact pads while maintaining electrical connection quality.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If the adhesive layer is made thicker to prevent die shifting, then die positioning stability improves, but the encapsulation process becomes more complex

Engineering Contradiction:
Improvedie positioning stabilityVSAvoidencapsulation process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Instead of uniformly thickening the adhesive layer across the entire die area, the bumps provide localized reinforcement at specific anchoring points. This local quality approach prevents die shifting through targeted protrusions rather than requiring a globally thicker adhesive layer, thereby simplifying the encapsulation process.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9257411B2Semiconductor device and method of embedding bumps formed on semiconductor die into penetrable adhesive layer to reduce die shifting during encapsulation
Publication Date: 2016.02.09 JCET SEMICON (SHAOXING) CO LTD
  • US9257411B2 patent drawing
  • US9257411B2 patent drawing
  • US9257411B2 patent drawing

AI summary

A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the first semiconductor die. A penetrable adhesive layer is formed over a temporary carrier. The adhesive layer can include a plurality of slots. The semiconductor die is mounted to the carrier by embedding the bumps into the penetrable adhesive layer. The semiconductor die and interconnect structure can be separated by a gap. An encapsulant is deposited over the first semiconductor die. The bumps embedded into the penetrable adhesive layer reduce shifting of the first semiconductor die while depositing the encapsulant. The carrier is removed. An interconnect structure is formed over the semiconductor die. The interconnect structure is electrically connected to the bumps. A thermally conductive bump is formed over the semiconductor die, and a heat sink is mounted to the interconnect structure and thermally connected to the thermally conductive bump.