Semiconductor Die Attachment via Selective NEAP Removal

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Solution Overview

Problem

Non-Etched Adhesion Promoter (NEAP) finish on leadframes limits compatibility with solder materials, resulting in reduced bonding strength and thermal/electrical conductivity in semiconductor devices, particularly in high-reliability packages.

Innovation Solution

Selective removal of the NEAP layer via laser beam ablation to restore wettability of underlying materials, creating solder mask areas for improved die attachment in flip-chip power Quad-Flat No-leads (QFN) packages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If NEAP finish is applied to leadframe surface, then adhesion to molding compound is improved, but compatibility with solder materials deteriorates

Engineering Contradiction:
Improveadhesion to molding compoundVSAvoidbonding strength with solder materials
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The leadframe surface is divided into distinct regions: areas with NEAP finish for molding compound adhesion and areas without NEAP finish for solder attachment. This segmentation allows each region to optimize its specific function without compromising the other.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different surface treatments are applied to different locations on the leadframe. The die pad areas remain bare metal or have minimal oxide for solder compatibility, while other areas receive NEAP finish for molding compound adhesion. This local differentiation resolves the contradiction between adhesion and solder compatibility.

Inventive Principle:
Principle #3Local quality

2Strength

If NEAP oxide layer is present, then adhesion to molding compound is facilitated, but thermal and electrical conductivity deteriorates

Engineering Contradiction:
Improveadhesion to molding compoundVSAvoidthermal and electrical conductivity
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The leadframe surface is segmented into regions with NEAP finish and regions without NEAP finish. The bare metal areas maintain high thermal and electrical conductivity for heat dissipation and electrical connection, while NEAP areas provide adhesion for molding compound.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The surface properties are locally optimized: die pad areas maintain metallicity for conductivity, while surrounding areas receive NEAP treatment for adhesion. This local quality differentiation resolves the contradiction between adhesion enhancement and conductivity preservation.

Inventive Principle:
Principle #3Local quality

3Reliability

If selective removal of NEAP layer is performed, then wettability with solder material is restored, but process complexity increases

Engineering Contradiction:
Improvewettability with solder materialVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The leadframe is pre-treated during manufacturing to create the desired pattern of NEAP finish and bare metal areas before assembly. This preliminary action eliminates the need for complex selective removal processes during assembly, reducing overall process complexity while achieving the required wettability.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances bonding strength and thermal/electrical conductivity by restoring wettability and compatibility with solder materials, facilitating effective die attachment and electrical connections in semiconductor devices.

Implementation Method 1

selective removal of the NEAP layer, via laser beam ablation, for instance

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Data Source

PatentUS20230187296A1Die attachment method for semiconductor devices and corresponding semiconductor device
Publication Date: 2023.06.15 STMICROELECTRONICS SRL
  • US20230187296A1 patent drawing
  • US20230187296A1 patent drawing
  • US20230187296A1 patent drawing

AI summary

The present disclosure is directed to a method of manufacturing semiconductor devices that includes providing a substrate such as a leadframe having a non-etched adhesion promoter, NEAP layer over the die mounting surface and attaching thereon a semiconductor die having an attachment surface including a first and a second die areas that are wettable by electrically conductive solder material. The NEAP layer is selectively removed, e.g., via laser ablation, from the first substrate area and the second substrate area of the die mounting surface of the substrate. The first substrate area and the second substrate area of the substrate having complementary shapes with respect to the first and second die areas of the semiconductor die. Electrically conductive solder material is dispensed on the first and second substrate areas of the substrate. A semiconductor die is flipped onto the substrate with the first die area and the second die area aligned with the first substrate area and the second substrate area of the substrate having the solder material dispensed thereon. The electrically conductive solder material thus provides electrical coupling of: the first die area and the first substrate area, and the second die area and the second substrate area.