Semiconductor Die Debonding via Laser Ablation Release Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for temporary wafer bonding and debonding in semiconductor device processing are inefficient, particularly in the use of release layers that do not effectively separate semiconductor devices from handling wafers without damaging the devices or the wafers themselves during the debonding process.
Innovation Solution
A method involving the application of a release layer on a handler wafer, which is then ablated using a laser to facilitate the removal of packaged semiconductor devices, allowing for efficient debonding without damaging the devices or the handler, utilizing UV or IR lasers and a chemically and thermally stable ablation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a release layer is used for temporary bonding, then the semiconductor devices can be processed on the handler, but the release layer does not effectively separate the devices from the handler without damage during debonding
Solution Approach 1:
The patent applies segmentation by introducing a distinct release layer as a separate functional component between the handler and semiconductor devices. This release layer is specifically designed to be removed or degraded after bonding, enabling clean separation without damaging either the handler or devices. The release layer segments the bonding interface into distinct functional zones: the handler, the release layer, and the semiconductor devices.
Solution Approach 2:
The release layer serves as an intermediary substance that facilitates temporary bonding during processing and then enables clean separation. This intermediary layer mediates between the handler and semiconductor devices, providing controlled adhesion during manufacturing and controlled release during debonding, thereby protecting both the handler and devices from damage.
2Ease of operation
If conventional debonding methods are used, then the process is simpler, but it causes damage to the semiconductor devices or the handler wafer
Solution Approach 1:
The patent replaces mechanical debonding methods (which cause damage) with a chemical or controlled degradation mechanism. The release layer is designed to undergo controlled decomposition or removal through chemical means, eliminating the need for forceful mechanical separation that would damage the semiconductor devices or handler wafer.
3Strength
If the release layer is too strong for bonding, then the devices are securely held during processing, but it requires excessive force or energy to remove the devices during debonding
Solution Approach 1:
The release layer exhibits dynamic properties, transitioning from a strong bonding state during processing to a weakened or removable state during debonding. This dynamic behavior allows the release layer to provide strong adhesion when needed while enabling easy separation when the processing is complete, adapting its bonding strength to the process requirements.
Solution Approach 2:
The patent utilizes parameter changes in the release layer's properties to control bonding and debonding. The release layer's chemical or physical parameters are changed (through controlled degradation, phase change, or chemical reaction) to transition from a high-strength bonding state to a low-strength or removable state, enabling secure holding during processing and easy removal during debonding without excessive energy input.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and clean debonding of semiconductor devices from handling wafers, ensuring the integrity of both the devices and the wafers, while allowing for robust semiconductor packaging processes.
Implementation Method 1
The release layer is ablated by irradiating the release layer through the handler with a laser
Data Source
AI summary
Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.