Semiconductor Die Separation Using Internal Laser Modification Paths
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Solution Overview
Problem
The existing methods for separating dies from a semiconductor substrate are inefficient and costly, requiring complex modifications to the production process and often causing damage to the wiring area during the separation process.
Innovation Solution
A method involving the use of laser radiation to create modifications within the semiconductor substrate, allowing for the separation of dies along defined areas without damaging the wiring, by introducing laser irradiation through the substrate's surface to generate first and second modifications that sub-divide the substrate and separate the dies efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If mechanical dicing is used to separate dies from the semiconductor substrate, then the separation process is simple and direct, but it causes damage to the wiring area and results in kerf losses
Solution Approach 1:
The patent replaces mechanical dicing with a laser-based modification process. Laser radiation is introduced into the semiconductor substrate to generate first modifications that laterally surround the dies and second modifications that sub-divide the substrate, enabling separation without mechanical contact and thus avoiding damage to wiring areas and kerf losses
Solution Approach 2:
The patent introduces modifications as an intermediary mechanism between the laser radiation and the final separation. These modifications (first and second) act as pre-defined separation paths that guide the subsequent separation process, ensuring clean separation without direct mechanical force applied to the wiring areas
2Loss of substance
If the semiconductor substrate is reused after producing device structures, then wafer costs are reduced, but the process becomes involved and complex requiring changes to production process
Solution Approach 1:
The patent segments the semiconductor substrate into distinct regions using laser-generated modifications. First modifications laterally surround individual dies while second modifications sub-divide the substrate into separate parts, creating defined separation areas that enable systematic reuse of substrate portions without complex processing
Solution Approach 2:
The patent performs preliminary laser modifications in the semiconductor substrate before the actual separation occurs. These first and second modifications are generated in advance to define separation areas, simplifying the subsequent separation process and enabling efficient substrate reuse without complex in-process modifications
3Manufacturing precision
If laser radiation is introduced into the semiconductor substrate to generate modifications, then separation precision is improved and wiring damage is avoided, but energy consumption increases
Solution Approach 1:
The patent applies laser radiation locally to specific regions of the semiconductor substrate where modifications are needed. The laser energy is concentrated at precise locations to generate first modifications around dies and second modifications for substrate division, achieving high separation precision while minimizing overall energy consumption by treating only necessary areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces manufacturing costs by avoiding mechanical dicing and kerf losses, enabling the reuse of reclaimed substrates and minimizing damage to the semiconductor devices, thus enhancing the efficiency and cost-effectiveness of semiconductor device production.
Implementation Method 1
generating first modifications in the semiconductor substrate by introducing laser radiation into an interior of the semiconductor substrate via a second surface
Implementation Method 2
generating second modifications in the semiconductor substrate by introducing laser radiation into an interior of the semiconductor substrate via the second surface
Data Source
AI summary
A method for separating dies from a semiconductor substrate having dies adjoining a first surface of the substrate includes: attaching the substrate to a carrier via the first surface; generating first modifications by introducing laser irradiation into an interior of the substrate via a second surface of the substrate, the first modifications extending between the first surface and a vertical level in the interior that is being spaced from the second surface, the first modifications laterally surrounding the dies; generating second modifications by introducing laser irradiation into the interior via the second surface, the second modifications sub-dividing the substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications; separating the parts along a first separation area defined by the second modifications; and separating the dies along a second separation area defined by the first modifications.