Semiconductor Die Packaging Laser Grooving Debris Management
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Solution Overview
Problem
The miniaturization of display ICs leads to issues with insulation between wirings, resulting in decreased bonding force, increased brittleness, and stress concentration during the dicing process, causing short-circuit failures due to silicon debris formed during the laser grooving process in semiconductor die packaging.
Innovation Solution
A manufacturing and packaging method that involves forming a wafer with a scribe line and seal-ring region, using a laser grooving process to generate silicon debris from the top surface of the second interlayer insulating film, and adjusting the height of the silicon debris by removing the passivation layer, ensuring sufficient space for ACF conductive balls to prevent short-circuit failures during the ACF bonding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating film with low dielectric constant is formed to prevent short circuits between wirings, then insulation performance is improved, but bonding force decreases and brittleness increases during dicing
Solution Approach 1:
The insulating film structure is segmented into multiple layers: a first insulating film with low dielectric constant (below 3.0) for insulation performance, and a second insulating film with higher dielectric constant formed on top to provide mechanical strength and bonding force. This segmentation allows each layer to fulfill its specific function without compromising the other.
Solution Approach 2:
Different regions of the insulating film structure have different properties. The first insulating film region has low dielectric constant optimized for insulation, while the second insulating film region has higher dielectric constant optimized for mechanical strength. This local differentiation resolves the contradiction between insulation performance and bonding strength.
2Reliability
If an insulating film with low dielectric constant is formed to improve insulation, then insulation performance is improved, but the wafer becomes more brittle and prone to cracking during dicing
Solution Approach 1:
The insulating film is divided into two segments: the first insulating film with low dielectric constant for insulation, and the second insulating film with higher dielectric constant providing structural stability. The second film acts as a protective layer that prevents cracking during dicing while the first film maintains insulation performance.
Solution Approach 2:
The insulating film structure uses composite materials with different dielectric constants. The combination of low-k first insulating film and higher-k second insulating film creates a composite structure that achieves both electrical insulation and mechanical stability, preventing wafer cracking during processing.
3Productivity
If mechanical cutting process is used to dice the wafer, then productivity is improved, but stress concentrates on the insulating film causing delamination at the interface
Solution Approach 1:
The second insulating film with higher dielectric constant and better mechanical properties is formed beforehand to cushion and distribute the stress from mechanical cutting. This protective layer prevents stress concentration at the interface between the first insulating film and silicon substrate, avoiding delamination during high-speed dicing.
4Manufacturing precision
If laser grooving process is used to remove insulating film, then manufacturing precision is improved, but silicon debris is generated that may cause short circuits
Solution Approach 1:
The passivation layer serves as an intermediary between the laser grooving process and the underlying structures. It absorbs and contains the silicon debris generated during laser grooving, preventing the debris from causing short circuits while allowing precise removal of the insulating film through the laser process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces the height of silicon debris, preventing short-circuit failures by ensuring adequate space for ACF conductive balls, thereby enhancing the reliability of semiconductor die packaging and reducing the risk of cracking during dicing.
Implementation Method 1
performing a laser grooving process to generate a silicon debris on the etched interlayer insulating film
Data Source
AI summary
A manufacturing and packaging method for a semiconductor die is provided. The method prepares a wafer which has a seal-ring region, forms a first interlayer insulating film on the wafer, forms a metal wiring in the first interlayer insulating film, forms a second interlayer insulating film on the first interlayer insulating film, forms metal pads on the second interlayer insulating film, forms a passivation layer on the metal pads, removes a portion of the passivation layer in a region adjacent to the seal-ring region to expose the second interlayer insulating film, etches a portion of the second interlayer insulating film, forms a bump on the metal pads, removes the first interlayer insulating film and the second interlayer insulating film in the region adjacent to the seal-ring region by a laser grooving process, and dices the wafer into a first semiconductor die and a second semiconductor die.