Semiconductor Die Pad Through Hole for Wire Bonding
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Solution Overview
Problem
Existing semiconductor devices face issues with damage to the connecting portion between wires and a die pad due to delamination of the adhesive interface, which can lead to decreased heat dissipation efficiency when measures are taken to prevent delamination.
Innovation Solution
A semiconductor device design featuring a die pad with a wire-bonding region covered by a metal film and a through hole penetrating through the die pad, where the encapsulation body is structured with portions over, under, and buried in the die pad, connecting these portions to alleviate stress and prevent delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If measures are taken to prevent delamination of the adhesive interface between the die pad and encapsulation body, then reliability of the wire connection is improved, but heat dissipation efficiency deteriorates
Solution Approach 1:
The encapsulation body is segmented into multiple portions: a first portion formed over the die pad, a second portion formed under the die pad, and a third portion buried in the through hole. This segmentation allows the encapsulation body to provide mechanical support and prevent delamination at multiple locations simultaneously, improving reliability without requiring excessive adhesive material that would impede heat dissipation.
Solution Approach 2:
A through hole penetrating through the die pad in the thickness direction is introduced, creating a vertical dimension for stress distribution. The third portion of the encapsulation body buried in this through hole provides reinforcement from both the top and bottom surfaces, distributing mechanical stress vertically and preventing delamination while maintaining thermal pathways through the die pad.
2Reliability
If the encapsulation body is formed to cover the entire die pad surface, then delamination is prevented, but heat dissipation performance decreases
Solution Approach 1:
The encapsulation body provides reinforcement at specific critical locations rather than uniformly covering the entire die pad. The first portion covers the wire-bonding region where delamination is most likely to occur, the second portion supports the bottom surface, and the third portion reinforces the through hole area. This localized quality approach prevents delamination at critical stress points while allowing heat to dissipate through other areas of the die pad.
3Stress or pressure
If a through hole is formed in the die pad, then stress on the wire-bonding region is reduced, but structural integrity of the die pad may be compromised
Solution Approach 1:
The third portion of the encapsulation body is embedded within the through hole, merging the structural support function with the stress-relief function. This embedded portion acts as a mechanical anchor that distributes stress from the wire-bonding region across the through hole walls and to the second portion of the encapsulation body, reducing localized stress while maintaining overall structural integrity through composite reinforcement.
Data Source
AI summary
A semiconductor device according to one embodiment of the present invention includes a wire electrically connecting a die pad and a semiconductor chip mounted on the die pad to each other, and an encapsulation body encapsulating the semiconductor chip. The die pad includes a wire-bonding region to which the wire is connected and a through hole penetrating through the die pad in a thickness direction. The wire-bonding region is covered by a metal film partially covering the die pad. The through hole is formed at a position overlapping the metal film. The encapsulation body includes a first portion formed over the die pad, a second portion formed under the die pad, and a third portion buried in the through hole of the die pad, wherein the first portion and the second portion of the encapsulation body are connected with each other via the third portion.