Semiconductor Die Rear-Side Ring Protrusion Against Warping
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Solution Overview
Problem
The stress caused by cutting and subsequent processes in semiconductor manufacturing leads to chipping and warping of dies, resulting in poor yield and process quality.
Innovation Solution
A semiconductor device with a ring-shaped protrusion on the rear surface is fabricated using plasma etching, enhancing stress resistance and preventing warping during bonding and packaging processes, and replacing traditional cutters to minimize chip collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional cutting methods are used to separate wafers into dies, then the wafer can be divided into individual components, but stress damage causes chipping and warping of the separated dies
Solution Approach 1:
The patent introduces a ring-shaped protrusion structure on the rear surface of each die that divides the substrate into multiple segments. This segmentation provides independent stress support zones that prevent warping while allowing clean separation of individual dies from the wafer.
Solution Approach 2:
The ring-shaped protrusion is formed on the rear surface before the wafer cutting process. This preliminary structural preparation ensures that when cutting occurs, each die already has built-in stress resistance, preventing chipping and warping that would otherwise occur during separation.
2Ease of manufacture
If subsequent bonding and packaging processes are performed, then the semiconductor device can be completed, but stress from these processes causes warping of the circuit pattern
Solution Approach 1:
The ring-shaped protrusion acts as a pre-established stress buffer that absorbs and distributes the stress generated during bonding and packaging processes. This beforehand cushioning prevents the stress from causing warping of the circuit pattern on the front surface.
Solution Approach 2:
The patent applies the ring-shaped protrusion structure at specific locations on the rear surface of each die. This localized structural modification provides targeted stress resistance exactly where needed to counteract the stress from bonding and packaging without affecting other areas.
3Strength
If plasma etching is used to form the ring-shaped protrusion, then stress resistance is improved, but the process complexity increases
Solution Approach 1:
The patent replaces traditional mechanical cutting methods with plasma etching to form the ring-shaped protrusion. This substitution uses a chemical field instead of mechanical force, enabling precise formation of the stress-resistant structure without the physical contact that causes stress damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ring-shaped protrusion provides a flatter process surface, improving yield by preventing warping and enhancing stress resistance, thus ensuring better process outcomes.
Implementation Method 1
an etching process is then performed to form at least one ring-shaped protrusion on the rear surface
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a circuit structure and a ring-shaped protrusion. The semiconductor substrate has a front surface and a rear surface opposed to each other. The circuit structure is located on the front surface. The ring-shaped protrusion is protruded on the rear surface.