Semiconductor Die Singulation Using Blanket Dry Etch

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Solution Overview

Problem

Conventional semiconductor die singulation methods require axial singulation lines, restricting the shape and pattern of semiconductor dies to regular shapes like squares and rectangles, which limits wafer utilization and die placement efficiency.

Innovation Solution

A method for forming semiconductor dies with irregular shapes and patterns that prevent axial singulation, using a simultaneous singulation process involving dry etching to remove singulation regions, allowing for non-rectangular, multiply-connected, and asymmetrical die configurations that maximize wafer area usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If axial singulation lines are used, then the singulation process is simple and straightforward, but the die shape is restricted to regular shapes like squares and rectangles, reducing wafer utilization

Engineering Contradiction:
Improvesingulation process simplicityVSAvoidwafer utilization efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The singulation process is divided into two independent stages: first forming irregularly shaped die patterns on the wafer, then applying a blanket etch to remove singulation regions. This segmentation allows the die design to be optimized for wafer utilization without being constrained by axial singulation line requirements, as the singulation step is decoupled from the die shape definition.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Instead of defining die shapes that conform to axial singulation lines (traditional approach), the invention inverts the approach by first defining irregular die shapes that maximize wafer utilization, then applying a blanket etch to create the singulation lines. This reversal of the design sequence enables irregular die geometries while maintaining simple singulation processing.

Inventive Principle:
Principle #13The other way round (Inversion)

2Ease of operation

If regular shaped die are arranged in a regular pattern, then axial singulation lines can be used, but die placement efficiency and wafer area usage are limited

Engineering Contradiction:
Improvesingulation line alignmentVSAvoidwafer area utilization
Core Design Contradiction:
Ease of operationVSArea of stationary object

Solution Approach 1:

The invention employs asymmetric and irregular die shapes that do not conform to regular grid patterns. By abandoning the requirement for regular die arrangements, the wafer surface can be more efficiently packed with die, reducing wasted space at wafer edges and between die. The asymmetric shapes are made possible by the blanket etch singulation method, which does not require predetermined axial singulation paths.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The invention transitions from one-dimensional axial singulation lines to a two-dimensional blanket etch approach. Instead of confining singulation to straight lines extending across the wafer in specific directions, the blanket etch method allows singulation regions to be defined in any two-dimensional pattern, enabling irregular die shapes and optimized wafer layouts that utilize the full wafer area more effectively.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If straight singulation lines are used, then the manufacturing process is straightforward, but die shapes must be regular squares or rectangles

Engineering Contradiction:
Improvesingulation process simplicityVSAvoiddie shape flexibility
Core Design Contradiction:
Ease of manufactureVSShape

Solution Approach 1:

The invention changes the fundamental parameter of singulation from linear (axial lines) to areal (blanket etch). By changing the singulation approach from one-dimensional straight lines to a two-dimensional blanket removal process, the die shape parameter gains flexibility. The blanket etch method removes material across the entire wafer surface according to a mask pattern, allowing die of any shape including irregular, multiply-connected, and asymmetrical geometries while maintaining manufacturing simplicity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the formation of more semiconductor dies per wafer area by eliminating the need for axial singulation lines, reducing waste, and allowing for closer die placement and interconnectivity, improving die placement efficiency and operating characteristics.

Implementation Method 1

using a dry etch to simultaneously singulate the plurality of semiconductor die

Methodology Applied
Scientific EffectDry etching:

Data Source

PatentUS8384231B2Method of forming a semiconductor die
Publication Date: 2013.02.26 SEMICON COMPONENTS IND LLC
  • US8384231B2 patent drawing
  • US8384231B2 patent drawing
  • US8384231B2 patent drawing

AI summary

In one embodiment, semiconductor die having non-rectangular shapes and die having various different shapes are formed and singulated from a semiconductor wafer.