Simultaneous Molding and Thermocompression Bonding
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Solution Overview
Problem
Conventional semiconductor manufacturing processes require separate steps for molding and thermocompression bonding, leading to increased time, cost, and potential handling defects.
Innovation Solution
Simultaneously depositing an encapsulant around or between the semiconductor die and substrate while bonding the die to the substrate using thermocompression, thereby integrating encapsulation and bonding into a single processing step.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate molding and bonding steps are used, then each process can be optimized independently, but manufacturing time increases and handling defects occur
Solution Approach 1:
The patent combines the molding process and bonding process into a single integrated operation. The molding compound is deposited and cured simultaneously with the bonding of the semiconductor die to the substrate, eliminating the need for separate processing steps and reducing manufacturing time while avoiding handling defects between steps.
Solution Approach 2:
The patent implements continuous processing where the molding compound deposition, curing, and bonding occur in an uninterrupted sequence within a single processing cycle. This continuous action eliminates idle time and intermediate handling, maintaining productive action throughout the entire process.
2Manufacturing precision
If separate molding and bonding steps are used, then each process can be controlled independently, but manufacturing cost increases
Solution Approach 1:
The patent merges two separate manufacturing operations (molding and bonding) into one integrated process step. This consolidation reduces the total number of process steps, equipment requirements, and operational overhead, thereby lowering manufacturing costs while maintaining control through a unified process protocol.
3Adaptability or versatility
If separate molding and bonding steps are used, then process flexibility is maintained, but handling defects increase
Solution Approach 1:
The patent combines molding and bonding into a single simultaneous operation, eliminating intermediate handling steps where defects could occur. The integrated process ensures that the semiconductor die remains in position during both deposition and curing, preventing misalignment and handling-related defects.
Solution Approach 2:
The patent performs preliminary positioning and alignment of the semiconductor die before initiating the simultaneous molding and bonding process. This preliminary action ensures proper alignment is established before the irreversible curing begins, maintaining process flexibility while preventing defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing time and cost while minimizing defects, enhancing production throughput and achieving high-quality semiconductor device packaging.
Implementation Method 1
bonding the die to the substrate using thermocompression
Data Source
AI summary
A semiconductor device has a semiconductor die disposed over a substrate. The semiconductor die and substrate are placed in a chase mold. An encapsulant is deposited over and between the semiconductor die and substrate simultaneous with bonding the semiconductor die to the substrate in the chase mold. The semiconductor die is bonded to the substrate using thermocompression by application of force and elevated temperature. An electrical interconnect structure, such as a bump, pillar bump, or stud bump, is formed over the semiconductor die. A flux material is deposited over the interconnect structure. A solder paste or SOP is deposited over a conductive layer of the substrate. The flux material and SOP provide temporary bond between the semiconductor die and substrate. The interconnect structure is bonded to the SOP. Alternatively, the interconnect structure can be bonded directly to the conductive layer of the substrate, with or without the flux material.