Semiconductor Die Bonding Structure With High-Thermal-Conductivity Interface
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving efficient heat dissipation and minimizing hot spots in System-on-Integrated-Circuit (SoIC) components, which are exacerbated by the increasing demand for miniaturization, higher speed, and lower power consumption.
Innovation Solution
The implementation of a process flow that involves forming a patterned bonding dielectric layer with high thermal conductivity, such as diamond-like carbon (DLC), over the interconnect structure of semiconductor dies. This layer includes openings and trenches filled with conductive materials, enhancing thermal conductivity and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the semiconductor die is miniaturized to increase integration density, then more components can be integrated into a given area, but heat dissipation becomes more difficult and hot spots are exacerbated
Solution Approach 1:
The patent applies local quality by creating a patterned bonding dielectric layer with spatially varying thermal conductivity. High thermal conductivity regions (conductive material fills) are strategically placed in areas requiring enhanced heat dissipation, while low thermal conductivity regions (dielectric material) are placed where electrical isolation is needed. This localized differentiation resolves the contradiction by enabling heat dissipation in specific hot spot areas without compromising the miniaturized integration density overall.
Solution Approach 2:
The bonding dielectric layer is constructed as a composite material system combining dielectric material (for electrical isolation) and conductive material (for thermal conduction). This composite structure allows simultaneous achievement of electrical insulation and thermal management functions within the miniaturized die, resolving the contradiction between high integration density and effective heat dissipation.
2Temperature
If a patterned bonding dielectric layer with high thermal conductivity is formed over the interconnect structure, then heat dissipation performance is enhanced, but the manufacturing process complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the patterned bonding dielectric layer during the wafer-level processing stage, before the dies are singulated. The patterned structure with alternating dielectric and conductive material regions is created in advance on the full wafer, which simplifies subsequent processing. This preliminary formation of the thermal management structure reduces the complexity of later manufacturing steps while achieving the desired heat dissipation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively enhances the heat dissipation performance of singulated semiconductor dies by providing a bonding interface with good thermal conductivity, thereby mitigating hot spot issues in SoIC components.
Implementation Method 1
forming a patterned bonding dielectric layer with high thermal conductivity, such as diamond-like carbon (DLC), over the interconnect structure
Data Source
AI summary
A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.