Semiconductor Die Trench Insulation for Power-Peripheral Heat Isolation
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Solution Overview
Problem
Existing technologies fail to effectively manage thermal management in high-density integrated semiconductor devices, particularly when power and peripheral circuitry are closely integrated, leading to potential malfunctioning or damage due to excessive heat generation.
Innovation Solution
A semiconductor die design with a thermal-insulation region using trenches filled with thermally insulating materials to separate high-voltage power devices from low-voltage peripheral devices, combined with a package that facilitates heat dissipation through a thermally conductive base plate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If power devices and peripheral circuitry are integrated in the same chip to increase integration density, then integration density is improved, but temperature control deteriorates due to heat generation from power devices
Solution Approach 1:
The chip is segmented into distinct power device regions and peripheral circuitry regions, separated by thermally insulating structures (trenches filled with insulating material). This spatial segmentation allows high integration density while preventing thermal coupling between heat-generating power devices and temperature-sensitive peripheral circuits.
Solution Approach 2:
Thermally insulating trenches filled with low thermal conductivity material are introduced as intermediary structures between power devices and peripheral circuitry. These intermediary elements block heat flow paths, enabling close integration while maintaining thermal isolation and preventing heat-induced malfunction.
2Productivity
If distance between power devices and peripheral circuitry is reduced to increase integration density, then integration density is improved, but thermal isolation deteriorates leading to heat-induced malfunction
Solution Approach 1:
The thermal insulation property is locally applied at the interfaces between power device regions and peripheral circuitry regions through trenches filled with thermally insulating material. This localized thermal management approach maintains reliability even when overall integration density is high and distances between regions are reduced.
Solution Approach 2:
Thermally insulating trenches serve as intermediary barriers that maintain thermal isolation between power devices and peripheral circuitry regardless of their proximity. These intermediary structures ensure reliable thermal management even when integration density requires minimal spacing between functional regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances integration density while preventing heat-induced malfunction by effectively isolating and dissipating heat, ensuring reliable operation of both power and peripheral circuits.
Implementation Method 1
a thermal-insulation region (1c) extending, in a top plan view of the die, between the peripheral region (1a) and the power region (1b)
Implementation Method 2
combined with a package that facilitates heat dissipation through a thermally conductive base plate
Data Source
Figure 1
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AI summary
A semiconductor die (1) comprising: a structural body (3) including a power region (1b) and a peripheral region (1a), surrounding the power region (1b); at least one power device (10) in the power region (1b); and trench-insulation means (12), extending in the structural body (3) starting from the front side towards the back side along a first direction (Z), adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction (X) orthogonal to the first direction (Z). The trench-insulation means (12) have an extension (d), in the second direction (X), greater than the thickness (h) of the structural body along the first direction (Z).