Semiconductor Structure With Dielectric Bonding Interface
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Solution Overview
Problem
The integration of photonic components with silicon-based CMOS or BiCMOS electronic circuits is challenging due to silicon's indirect band gap and large lattice mismatch with direct band gap semiconductor materials, making it difficult to achieve high-speed signal transmission and processing using optical signals.
Innovation Solution
A semiconductor structure is developed with a processed semiconductor substrate, a dielectric layer, and an interface layer suitable for growing optically active materials, allowing for bonding and electric/optical contacts between the substrate and the interface layer, enabling the integration of optically active materials like III-V compound semiconductors or germanium with silicon-based electronics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If silicon-based CMOS or BiCMOS electronic circuits are used, then high integration and manufacturing scalability are achieved, but optical gain and light source functionality are lost due to silicon's indirect band gap
Solution Approach 1:
The patent divides the semiconductor structure into distinct functional layers: a silicon-based processed semiconductor substrate providing electronic circuit functionality, and a separate optically active layer providing optical gain. This segmentation allows each layer to be optimized for its specific function while being integrated through the dielectric layer, resolving the contradiction between silicon's manufacturing advantages and optical functionality requirements.
Solution Approach 2:
The patent introduces a dielectric layer as an intermediary bonding interface between the silicon substrate and the optically active layer. This intermediary layer enables the integration of materials with different properties (silicon and direct band gap semiconductors) without requiring direct lattice matching, thus preserving both the manufacturing scalability of silicon and the optical gain capability of direct band gap materials.
2Reliability
If direct band gap semiconductor materials are integrated with silicon, then optical gain and light source functionality are achieved, but integration difficulty increases due to large lattice mismatch
Solution Approach 1:
The dielectric layer serves as a mediator that decouples the lattice mismatch problem from the integration process. By bonding the optically active layer to the dielectric layer rather than directly to silicon, the patent eliminates the need for direct lattice matching between silicon and direct band gap materials, significantly reducing integration difficulty while maintaining optical gain capability.
Solution Approach 2:
The patent applies different material properties to different regions: the silicon substrate maintains its indirect band gap properties for electronic circuit operation, while the optically active layer provides direct band gap properties for optical gain. This local differentiation allows each region to perform its specialized function without being constrained by the limitations of the other material.
3Reliability
If optically active material is grown on silicon substrate, then light source functionality is achieved, but thermal stress increases due to lattice mismatch
Solution Approach 1:
The dielectric layer acts as a stress-buffering intermediary between the silicon substrate and the optically active layer. This intermediate layer accommodates thermal expansion differences and lattice mismatch, preventing the buildup of excessive thermal stress that would occur with direct bonding, thereby enabling reliable integration of optically active materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach facilitates the efficient integration of photonic components with electronic components on a single chip, enabling compact and reliable systems-on-chips with improved signal transmission and processing capabilities, reducing thermal stress and enhancing material quality.
Implementation Method 1
the interface layer may exhibit a crystal lattice structure that is compatible with the epitaxial growth of other suitable materials that are optically active
Implementation Method 2
The bonding between the interface layer and the dielectric layer can be based on molecular bonding
Data Source
AI summary
A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.