3D Semiconductor Structure with Dielectric Isolation
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high element density and small size while maintaining stability and preventing short circuits due to bending and collapsing of conductive layers in three-dimensional structures.
Innovation Solution
A semiconductor structure is developed with a conductive layer, dielectric layer, and conductive architecture, where the dielectric layer separates the conductive layers and architecture, and insulating plugs are formed to support the conductive strips, preventing short circuits and reducing bending issues through a manufacturing method involving alternating layers and controlled etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional stacked memory structure is adopted to increase storage capacity, then element density is improved, but conductive layers may bend and collapse causing short circuits
Solution Approach 1:
A dielectric layer is introduced as an intermediary between the conductive layer and the conductive architecture. This dielectric layer prevents direct contact and potential short circuits while maintaining the three-dimensional stacked structure for high element density.
Solution Approach 2:
The structure is segmented into distinct functional layers: conductive layer, dielectric layer, and conductive architecture. This segmentation allows each layer to perform its specific function independently, with the dielectric layer providing electrical isolation to prevent short circuits in the high-density stacked configuration.
2Quantity of substance
If conductive layers are placed in close proximity to increase density, then storage capacity is improved, but coupling interference between bit lines increases
Solution Approach 1:
The dielectric layer serves as an intermediary that electrically isolates adjacent conductive layers and architectures, preventing unwanted coupling interference between bit lines while allowing the layers to remain in close proximity for high storage capacity.
Data Source
AI summary
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a conductive layer, a conductive architecture and a dielectric layer. The conductive layer defines adjacent first openings. The conductive architecture surrounds a portion of the conductive layer between the first openings. The dielectric layer separates the conductive layer and the conductive architecture.