Semiconductor Dielectric Diffusion Layout Without TiN Barrier Blocking
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Solution Overview
Problem
In semiconductor manufacturing, the first titanium nitride layer between the aluminum oxide layer and the dielectric layer prevents aluminum from diffusing during annealing, affecting the performance of the semiconductor structure.
Innovation Solution
A manufacturing method involving a substrate with distinct regions, where a dielectric layer and a first diffusion film layer are formed, with the first diffusion film layer corresponding to one region removed, and a second diffusion film layer with a second metal oxide layer is formed on the other region, allowing for effective diffusion of metal elements into the dielectric layer during annealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a first titanium nitride layer, an aluminum oxide layer and a second titanium nitride layer are sequentially formed on the dielectric layer, then the aluminum oxide layer can be retained in the second region, but the first titanium nitride layer prevents aluminum element from diffusing into the dielectric layer during annealing
Solution Approach 1:
The patent divides the diffusion film layer into two separate layers: a first diffusion film layer (first metal oxide layer) and a second diffusion film layer (second metal oxide layer). Each layer is selectively formed in different regions (first and second regions respectively) and removed from opposite regions, enabling independent control of metal element diffusion in each region without mutual interference.
Solution Approach 2:
The patent applies different diffusion film layer configurations to different regions of the dielectric layer. The first diffusion film layer is formed only in the first region and removed from the second region, while the second diffusion film layer is formed only in the second region and removed from the first region. This localized approach allows each region to have optimized diffusion characteristics suitable for its specific requirements.
2Reliability
If the first titanium nitride layer is removed, then aluminum element can diffuse into the dielectric layer, but the manufacturing process becomes more complex
Solution Approach 1:
Instead of using a single multi-layer structure that requires selective removal, the patent segments the diffusion film into two separate single-layer structures. Each layer is formed and removed in a straightforward manner without the need to selectively remove specific layers from specific regions, thereby simplifying the manufacturing process while maintaining effective diffusion.
Solution Approach 2:
The patent extracts the barrier layer (titanium nitride layer) from the diffusion film structure entirely, replacing it with a simpler metal oxide layer configuration. This eliminates the need for complex selective removal processes while achieving the desired diffusion effect through the annealing treatment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the performance of the semiconductor structure by ensuring that metal elements can easily diffuse into their respective regions, improving the structure's functionality.
Implementation Method 1
an annealing treatment is performed to diffuse a first metal element in the first metal oxide layer into the dielectric layer corresponding to the first region and diffuse a second metal element in the second metal oxide layer into the dielectric layer corresponding to the second region
Implementation Method 2
an annealing treatment is performed to diffuse a first metal element in the first metal oxide layer into the dielectric layer corresponding to the first region
Data Source
AI summary
A manufacturing method for a semiconductor structure includes: a substrate is provided, the substrate including a first region and a second region; a dielectric layer is formed on the substrate; a first diffusion film layer having a first metal oxide layer is formed on the dielectric layer; the first diffusion film layer corresponding to the second region is removed; a second diffusion film layer is formed on the dielectric layer corresponding to the second region, the second diffusion film layer including a second metal oxide layer interfacing with the dielectric layer; and an annealing treatment is performed to diffuse a first metal element in the first metal oxide layer into the dielectric layer corresponding to the first region and diffuse a second metal element in the second metal oxide layer into the dielectric layer corresponding to the second region.