Semiconductor Structure with Dielectric Interface for Photonic Integration
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Solution Overview
Problem
The integration of photonic components with silicon-based CMOS or BiCMOS electronic circuits is challenging due to silicon's indirect band gap and large lattice mismatch with direct band gap semiconductor materials, making it difficult to achieve high-speed signal transmission and processing.
Innovation Solution
A semiconductor structure is developed with a processed semiconductor substrate, a dielectric layer, and an interface layer suitable for growing optically active materials, allowing for the integration of photonic components like light sources with conventional silicon-based driving circuitry through electric and optical contacts, using materials like III-V compound semiconductors or germanium with direct band gaps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If silicon-based CMOS or BiCMOS electronic circuits are used, then high integration and manufacturing scalability are achieved, but the ability to realize light sources and optical gain is lost due to silicon's indirect band gap
Solution Approach 1:
The patent divides the semiconductor structure into distinct functional layers: a silicon-based processed semiconductor substrate providing electronic circuit functionality, and a separate optically active layer providing optical gain. This segmentation allows each layer to be optimized for its specific function while being integrated through the dielectric layer, resolving the contradiction between maintaining silicon's manufacturing advantages and adding optical capabilities.
2Adaptability or versatility
If direct band gap semiconductor materials are used for light sources, then optical gain is achieved, but large lattice mismatch with silicon makes integration difficult
Solution Approach 1:
The patent introduces a dielectric layer as an intermediary between the silicon substrate and the optically active layer. This intermediary layer accommodates the lattice mismatch between silicon and direct band gap materials, enabling their integration without the harmful effects of direct bonding. The dielectric layer serves as a buffer that allows both materials to coexist while maintaining their respective properties.
3Area of stationary object
If photonic components are integrated with electronic circuits on a single chip, then compact system-on-chip design is achieved, but electrical and optical interconnection complexity increases
Solution Approach 1:
The patent merges electronic and photonic components into a single integrated structure where the optically active layer is directly bonded to the silicon substrate through a dielectric layer. This merging eliminates the need for separate packaging and complex interconnection schemes, as both electronic and optical functions are realized within the same chip structure, reducing overall system complexity despite the integrated nature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient integration of optically active and electronic functions on a single chip, facilitating high-speed signal processing and transmission by allowing for the growth of optically active materials on a compatible interface layer, reducing thermal stress and improving material quality, and enabling compact, reliable electro-optical chips.
Implementation Method 1
the interface layer is suitable for growing optically active material on the interface layer
Data Source
AI summary
A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.