Semiconductor S/D Structure With Dielectric Liner Channel Width Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high device density and performance while maintaining power efficiency, particularly in controlling the effective width of channels in nanostructure transistors, which affects speed and power consumption.
Innovation Solution
The semiconductor device structure incorporates a dielectric liner layer and an insulating layer to define the effective number of nanostructures, allowing for the coexistence of multiple nanostructures that can enhance speed performance in one region and power efficiency in another, by controlling the locations of these layers to adjust the channel width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the channel width in nanostructure transistors is increased to improve speed performance, then the device speed is improved, but the power consumption increases
Solution Approach 1:
The patent applies local quality by forming different numbers of nanostructures in different regions of the semiconductor device. A first region contains a first number of nanostructures optimized for high speed performance, while a second region contains a second number of nanostructures optimized for power efficiency. This spatial differentiation allows each region to have tailored electrical characteristics without compromising the other, resolving the contradiction between speed and power consumption at the device level.
2Quantity of substance
If more nanostructures are formed to increase device density, then the device density is improved, but the control over effective channel width becomes more difficult
Solution Approach 1:
The patent segments the semiconductor device into multiple regions with different numbers of nanostructures. By dividing the device into a first region and a second region, each with independently controlled nanostructure counts, the patent achieves high device density through multiple nanostructures while maintaining precise control over effective channel width in each segment. The dielectric liner and insulating layers are also segmented to correspond with these regions, enabling independent optimization.
Solution Approach 2:
The patent introduces dielectric liners and insulating layers as intermediary structures between the substrate and the nanostructures. These intermediary layers provide precise control over the formation and spacing of multiple nanostructures, enabling accurate channel width control even as the number of nanostructures increases. The dielectric materials act as mediators that facilitate the creation of well-defined nanostructure geometries.
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a first fin structure and a second fin structure over a substrate. The method includes forming a dummy gate structure over the first fin structure and the second fin structure, and removing a portion of the first fin structure and the second fin structure to form a first source/drain (S/D) recess and a second S/D recess. The method includes forming a first bottom layer in the first S/D recess and a second bottom layer in the second S/D recess, and forming a first dielectric liner layer over the first bottom layer. The method includes forming a first top layer over the first dielectric liner layer, and forming a first S/D structure over the first top layer and a second S/D structure over the second bottom layer.