Semiconductor Dielectric Layer Moisture Removal via Microwave Degassing
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Solution Overview
Problem
The reduction in thickness and width of dielectric layers in semiconductor devices leads to degradation of electrical properties and vulnerability to moisture penetration, causing failures in interconnections.
Innovation Solution
A method involving a degassing process using microwaves and a K-value recovery process with UV light is performed in-situ to remove moisture from the interlayer insulating layer, improving electrical properties and reducing process time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dielectric layers are reduced in thickness and width to enable high integration, then integration density is improved, but electrical properties degrade and moisture penetration vulnerability increases
Solution Approach 1:
The patent performs degassing and K-value recovery processes as preliminary treatments before forming conductive layers. By removing moisture and recovering dielectric properties in advance, the interlayer insulating layer is prepared to maintain electrical performance even at reduced thickness, enabling high integration without sacrificing reliability
Solution Approach 2:
The patent changes the physical and chemical parameters of the interlayer insulating layer through controlled thermal processing (degassing at elevated temperature) and UV irradiation (K-value recovery). These parameter changes restore dielectric properties and reduce moisture content, allowing thin dielectric layers to maintain adequate electrical characteristics for high-density integration
2Productivity
If dielectric layers are reduced in thickness and width, then integration density is improved, but vulnerability to moisture penetration increases causing interconnection failures
Solution Approach 1:
The patent performs degassing and K-value recovery as preliminary protective measures before subsequent processing steps. By removing moisture and strengthening dielectric properties in advance, the interlayer insulating layer is protected against moisture penetration that would otherwise cause interconnection failures in thin dielectric structures
Solution Approach 2:
The degassing process is performed in a controlled environment that creates an inert atmosphere, preventing moisture ingress during thermal processing. This inert environment protection is crucial for maintaining low moisture content in reduced-thickness dielectric layers that would otherwise be highly vulnerable to moisture penetration
3Reliability
If multiple separate processes are used for degassing, K-value recovery, and conductive layer formation, then process quality is maintained, but process time increases
Solution Approach 1:
The patent merges the degassing process, K-value recovery process, and conductive layer formation into a single integrated process sequence performed in one chamber. The interlayer insulating layer undergoes moisture removal, dielectric property recovery, and subsequent conductive layer deposition without chamber evacuation or substrate removal, significantly reducing total process time while maintaining quality through controlled sequential processing
Solution Approach 2:
The patent implements continuous useful action by performing degassing, K-value recovery, and conductive layer formation in an uninterrupted sequence within the same chamber. The substrate remains in the chamber throughout, with processes transitioning continuously without idle time for loading/unloading or chamber pumping, maximizing equipment utilization and reducing overall process time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes moisture, enhancing the electrical properties and production efficiency of semiconductor devices by performing the degassing and K-value recovery processes sequentially with the formation of conductive layers.
Implementation Method 1
A degassing process is performed by irradiating the interlayer insulating layer having the opening with microwaves
Implementation Method 2
A K-value recovery process is performed by irradiating the interlayer insulating layer having the opening with UV light
Data Source
AI summary
A method of fabricating a semiconductor device including an interlayer insulating layer and interconnections is provided. An interlayer insulating layer is formed on a substrate. An opening is formed in the interlayer insulating layer. A degassing process is performed by irradiating the interlayer insulating layer having the opening with microwaves. A K-value recovery process is performed by irradiating the interlayer insulating layer having the opening with UV light. A conductive layer is formed in the opening. The degassing process and the K-value recovery process are performed as an in-situ process.