Semiconductor Device With Dielectric Pattern For Field Control
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Solution Overview
Problem
As semiconductor devices continue to scale down, the challenge lies in maintaining effective electrical connections and control over smaller geometries while minimizing diffusion and humidity effects, which current materials and manufacturing processes struggle to address efficiently.
Innovation Solution
The introduction of a dielectric pattern formed on the channel layer to overlap with the gate electrode, which includes high-k dielectric materials and is partially embedded in the source/drain regions, enhances the control of the electric field and reduces humidity influence by improving the water absorption capacity and structural integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If geometry size is decreased to increase functional density, then production efficiency is improved and costs are lowered, but control over smaller geometries becomes difficult and diffusion effects increase
Solution Approach 1:
The patent introduces a dielectric pattern with specific local properties (high-k dielectric material) at the gate electrode overlap region to provide enhanced electric field control precisely where needed in the scaled-down geometry, addressing the manufacturing precision challenge while maintaining overall device scaling benefits
2Productivity
If geometry size is decreased to increase functional density, then production efficiency is improved and costs are lowered, but diffusion effects become more significant
Solution Approach 1:
The dielectric pattern acts as an intermediary structure between the gate electrode and channel layer, providing a controlled interface that manages diffusion effects in the scaled-down geometry while enabling effective electric field control
3Ease of manufacture
If conventional materials and structures are used, then manufacturing is simpler, but humidity effects and water absorption reduce transistor performance
Solution Approach 1:
The patent employs a composite structure combining high-k dielectric material with specific structural configuration (dielectric pattern overlapping gate electrode and partially embedded in source/drain regions) to create a system that resists humidity effects while maintaining manufacturability through integration with existing processes
4Manufacturing precision
If gate electrode control is enhanced in scaled-down geometries, then transistor performance improves, but manufacturing complexity increases
Solution Approach 1:
The dielectric pattern is formed in advance during the manufacturing process, pre-establishing the enhanced electric field control structure before subsequent processing steps, which simplifies the overall manufacturing complexity while achieving improved gate electrode control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the control of the gate electrode over the transistor, enhances polarization of ferroelectric materials, and reduces the impact of humidity, leading to more uniform electric fields and improved transistor performance.
Implementation Method 1
The introduction of a dielectric pattern formed on the channel layer to overlap with the gate electrode, which includes high-k dielectric materials
Implementation Method 2
reduces humidity influence by improving the water absorption capacity
Data Source
AI summary
A semiconductor device includes a transistor. The transistor includes a gate electrode, a channel layer, a gate dielectric layer, a first source/drain region and a second source/drain region and a dielectric pattern. The channel layer is disposed on the gate electrode. The gate dielectric layer is located between the channel layer and the gate electrode. The first source/drain region and the second source/drain region are disposed on the channel layer at opposite sides of the gate electrode. The dielectric pattern is disposed on the channel layer. The first source/drain region covers a first sidewall and a first surface of the dielectric pattern, and a second sidewall opposite to the first sidewall of the dielectric pattern is protruded from a sidewall of the first source/drain region.