Semiconductor Structure With Dielectric Platform For Parasitic Capacitance Reduction
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Solution Overview
Problem
In semiconductor technology, integrated passive devices on conductive silicon substrates suffer from low quality factors and reduced frequency of operation due to parasitic capacitive coupling, which limits their performance in high-frequency applications, and there is a need to increase the output power of power transistors by enhancing breakdown voltage.
Innovation Solution
A dielectric platform with a low dielectric constant is created by forming dielectric structures and cavities in the substrate, which reduces parasitic capacitance and stress, allowing for the isolation of active regions and the formation of high-quality passive devices, thereby increasing the frequency of operation and breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If passive devices are formed on conductive silicon substrate, then integration with active devices is achieved, but quality factor decreases due to parasitic capacitive coupling
Solution Approach 1:
A dielectric platform is introduced as an intermediary layer between the conductive silicon substrate and the passive devices. This dielectric platform acts as a mediator that reduces parasitic capacitive coupling while maintaining the ability to integrate passive and active devices, thereby improving quality factor without sacrificing integration capability
Solution Approach 2:
The substrate structure is segmented into distinct regions: a conductive silicon substrate, a dielectric platform layer, and device formation regions. This segmentation allows the conductive substrate to provide integration benefits while the dielectric platform isolates passive devices to maintain high quality factors
2Productivity
If passive devices are formed close to conductive substrate, then device density increases, but frequency of operation decreases due to parasitic capacitive coupling
Solution Approach 1:
The dielectric platform serves as an intermediary that enables passive devices to be positioned close to the substrate while maintaining high frequency operation. The platform reduces parasitic capacitance, allowing device density to increase without compromising frequency of operation
3Ease of operation
If interconnects are placed on conductive substrate, then electrical coupling between devices is achieved, but frequency of operation decreases due to parasitic capacitive coupling
Solution Approach 1:
The dielectric platform acts as a mediator for interconnects, allowing them to be placed on the substrate while reducing parasitic capacitive coupling. This enables effective electrical coupling between devices while maintaining high frequency of operation
4Reliability
If dielectric structures are formed in substrate, then parasitic capacitance is reduced, but device complexity increases
Solution Approach 1:
The substrate is segmented into distinct functional layers with the dielectric platform forming a continuous base layer. This segmentation approach reduces parasitic capacitance through systematic layering rather than adding complex individual structures, thereby limiting the increase in device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric platform effectively reduces parasitic capacitance, increases the frequency of operation, and enhances the breakdown voltage of semiconductor devices, enabling the formation of high-quality passive components and efficient power transistors.
Implementation Method 1
parasitic capacitive coupling between these passive devices and the conductive silicon substrate
Implementation Method 2
reduces parasitic capacitance and stress
Data Source
AI summary
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.