Semiconductor Dielectric Stack with Removable Etch-Stop Structures

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The complexity of manufacturing and integration in semiconductor devices leads to deficiencies, necessitating an improvement in the manufacturing process to address these issues.

Innovation Solution

A semiconductor device structure with multiple stacked dielectric layers and conductors, incorporating energy removable structures that act as etch stops during the etching process, allowing for the easy removal of these structures post-processing, thereby reducing aspect ratio differences and enhancing the performance, reliability, and yield of the device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple stacked dielectric layers and conductors are integrated to increase device functionality, then device functionality and integration are improved, but manufacturing complexity increases

Engineering Contradiction:
Improvedevice functionalityVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent divides the manufacturing process into distinct stages by introducing energy removable structures that can be selectively removed after serving their etch stop function. This segmentation allows complex multi-layer structures to be manufactured in modular steps, reducing overall manufacturing complexity while maintaining device functionality.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Energy removable structures are placed in advance at specific locations within the dielectric layers to serve as etch stop references during subsequent etching processes. This preliminary action simplifies the etching of high aspect ratio openings by providing predetermined stopping points, thereby reducing manufacturing complexity.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If energy removable structures are used as etch stops to reduce aspect ratio differences, then etching precision is improved, but device structure complexity increases

Engineering Contradiction:
Improveetching precisionVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The energy removable structures are designed as temporary, disposable elements that serve their etch stop function and are then removed. These structures are not part of the final device but are essential during manufacturing to achieve precise etching results, thereby improving etching precision without permanently increasing device complexity.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The patent employs energy removable structures that are discarded after serving their purpose as etch stops. This approach allows for high precision etching during manufacturing while the temporary structures are removed in subsequent processing steps, preventing permanent complexity in the final device structure.

Inventive Principle:
Principle #34Discarding and recovering

3Productivity

If the etching process is simplified by reducing aspect ratio differences, then productivity is improved, but etching precision may be compromised

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidetching precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

Energy removable structures serve as intermediary elements during the etching process, acting as physical references that mediate between the etching tool and the final structure. These intermediaries enable both simplified etching processes (improving productivity) and precise etching results (maintaining precision) by providing predetermined etch stop points.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20240186244A1Semiconductor device structure with energy removable structure and method for preparing the same
Publication Date: 2024.06.06 NAN YA TECH
  • US20240186244A1 patent drawing
  • US20240186244A1 patent drawing
  • US20240186244A1 patent drawing

AI summary

A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a first energy removable structure disposed in the first dielectric layer. The semiconductor device structure also includes a second dielectric layer disposed over the first dielectric layer, and an Nth dielectric layer disposed over the second dielectric layer. The N is an integer greater than 2. The semiconductor device structure further includes a first conductor disposed in the Nth dielectric layer, and an (N+1)th dielectric layer disposed over the Nth dielectric layer. A top surface of the first conductor is exposed by a first opening, and a top surface of the first energy removable structure is exposed by a second opening.