Semiconductor Diffuser for Uniform Gas Flow and Contamination Control
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Solution Overview
Problem
The increasing dimensions of integrated circuits and rising circuit operating frequency lead to signal delays and crosstalk between metal lines due to capacitive coupling, exacerbated by the use of shorter metal lines, which existing insulating materials fail to adequately address, particularly in semiconductor devices where low-k dielectrics are used to minimize transmission delays.
Innovation Solution
A diffuser is installed in the transfer chamber of a semiconductor processing system to provide a uniform gas flow, reducing vortex formation and particulate contamination during substrate transfer, thereby minimizing defects and thermal stress in the final devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a diffuser is installed in the transfer chamber to provide uniform gas flow, then particle agitation and contamination are reduced, but device complexity increases
Solution Approach 1:
A diffuser is introduced as an intermediary component in the gas flow path between the gas source and the semiconductor substrate. The diffuser mediates the gas flow by distributing it uniformly across the chamber, preventing direct high-velocity gas jets from agitating particles and causing contamination. This intermediary element solves the contamination problem while maintaining a relatively simple overall system architecture.
2Object-affected harmful factors
If purge gas flow rate is increased to reduce contamination, then particle suppression improves, but thermal stress on substrates increases
Solution Approach 1:
The diffuser creates local quality variations in the gas flow by distributing the purge gas uniformly across different regions of the chamber. Instead of a single high-velocity jet that causes both contamination and thermal stress, the gas flow is divided into multiple lower-velocity streams that collectively achieve particle suppression without concentrating thermal energy on specific substrate areas. This local distribution approach resolves the contradiction between contamination control and thermal stress reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The uniform gas flow suppresses particle agitation, reduces contamination, and decreases thermal stress, leading to improved device yield and reduced likelihood of cracking, especially beneficial for porous low-k dielectrics which are prone to breakdown under bias and low-electric fields.
Implementation Method 1
a diffuser adapted to fit into the at least one gas inlet port and protrude into an interior of the transfer chamber. The diffuser includes a base portion and a head portion fluidly coupled to the based portion. The head portion includes a diffuser element configured to diffuse a purge gas substantially uniformly into the interior of the transfer chamber.
Data Source
AI summary
A diffuser for diffusing a gas includes a base portion and a head portion fluidly coupled to the base portion. The head portion includes a diffuser element configured to diffuse a first fraction of the gas through a circumference of the diffuser element and a second fraction of the gas through an end surface of the diffuser element. The head portion further includes a connecting structure having a first connecting portion configured to receive a portion of the diffuser element therein and a second connecting portion protruding outwardly from the first connecting portion and configured to couple to the base portion.