Semiconductor Device Diffusion Barrier Metal Film
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Solution Overview
Problem
In semiconductor devices, solder material diffusion through the Cu film can lead to separation between the insulating base material and the Cu film, causing reliability issues due to degraded adhesiveness at their interface.
Innovation Solution
Incorporating first and second diffusion barrier metal films, such as Ni, between the electro-conductive member and solders, and an adhesive metal film with strong adhesiveness to the insulating film, prevents solder diffusion to the interface, enhancing the adhesiveness and reducing separation risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Cu film is used as the electro-conductive member, then electrical conductivity is improved, but solder diffusion through the Cu film causes separation between the insulating base material and the Cu film
Solution Approach 1:
A diffusion barrier metal film (such as Ni or Pd) is introduced as an intermediary layer between the Cu film and the solder bump electrodes. This intermediate layer prevents solder atoms from diffusing through the Cu film to the insulating base material interface, thereby eliminating the harmful diffusion effect while maintaining the electrical conductivity provided by the Cu film.
Solution Approach 2:
The electro-conductive member is constructed as a composite structure consisting of multiple metal layers: a Cu film layer providing electrical conductivity, a diffusion barrier metal film layer preventing solder diffusion, and optionally an adhesive metal film layer enhancing bonding to the insulating base material. This composite structure simultaneously achieves conductivity, diffusion prevention, and strong adhesiveness.
2Reliability
If solder bump electrodes are mounted on both surfaces of the insulating base material, then electrical connectivity is improved, but solder diffusion reaches the interface and causes separation
Solution Approach 1:
Diffusion barrier metal films are introduced as intermediary layers on both surfaces of the insulating base material, between the Cu film and the solder bump electrodes. These intermediate layers prevent solder atoms from diffusing to the insulating base material interface from either surface, thereby maintaining interface stability while preserving electrical connectivity through the Cu film and diffusion barrier structure.
3Strength
If the insulating base material and Cu film are brought into close contact, then adhesiveness is improved, but solder diffusion degrades the adhesiveness at the interface
Solution Approach 1:
An adhesive metal film (such as Ti or Cr) is introduced as an intermediary layer between the insulating base material and the Cu film. This adhesive layer provides strong bonding to both the insulating base material and the Cu film, creating a robust interface that resists separation. The diffusion barrier metal film is positioned between this adhesive layer and the solder, preventing solder diffusion from degrading the interface adhesiveness.
Solution Approach 2:
The interface structure is constructed as a composite of multiple functional layers: the insulating base material, an adhesive metal film layer providing strong bonding, a diffusion barrier metal film layer preventing solder diffusion, and the Cu film layer providing electrical conductivity. This composite structure simultaneously achieves strong adhesiveness, diffusion prevention, and electrical conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents solder diffusion to the interface, reducing the likelihood of separation between the insulating film and the adhesive metal film, thereby improving the reliability and stability of the semiconductor device.
Implementation Method 1
a first diffusion barrier metal film provided between the electro-conductive member and the first solder, and preventing diffusion of the first solder; a second diffusion barrier metal film constituting at least a part of the electro-conductive member, and preventing diffusion of the second solder
Data Source
AI summary
A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.