Semiconductor Diffusion Barrier Injection Region for Dopant Control
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Solution Overview
Problem
The challenge in semiconductor devices is to enhance reliability and electric characteristics while increasing integration and reducing costs, particularly in portable devices, where existing technologies face issues with dopant diffusion and short channel effects.
Innovation Solution
A semiconductor device is designed with a diffusion barrier element injection region, including halogen elements, which are strategically placed to minimize dopant diffusion and adjust concentration gradients, thereby controlling the short channel effect and improving the device's reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dopant concentration is increased to improve device performance, then electric characteristics are improved, but dopant diffusion increases causing short channel effects and reliability degradation
Solution Approach 1:
A diffusion barrier element (nitrogen or oxygen) is introduced as an intermediary substance between the source and channel regions. This barrier element selectively blocks dopant diffusion while allowing carrier diffusion, thereby preventing short channel effects without compromising device performance. The barrier element acts as a mediator that distinguishes between different types of diffusion processes.
Solution Approach 2:
The diffusion barrier element is selectively positioned in specific regions (source and channel regions) rather than uniformly throughout the device. This local application creates zone-specific properties: the barrier regions prevent dopant diffusion where needed, while other regions maintain normal dopant distribution for optimal device operation.
2Productivity
If device integration is increased to meet market demands, then productivity and performance are improved, but process margins and reliability become harder to secure
Solution Approach 1:
The invention introduces a new parameter (diffusion barrier element concentration) that can be independently controlled to adjust device characteristics. By varying the concentration and distribution of the barrier element, device performance and reliability can be optimized without changing the fundamental device structure or fabrication process, enabling continued integration scaling.
Solution Approach 2:
The diffusion barrier element is introduced during the epitaxial growth process before final device fabrication. This preliminary action establishes the dopant diffusion profile early in the manufacturing process, ensuring that subsequent processing steps operate within optimal process margins and reducing variability in final device characteristics.
3Reliability
If dopant diffusion distance is increased to improve device characteristics, then electric performance is enhanced, but short channel effects worsen
Solution Approach 1:
The diffusion barrier element serves as a spatial mediator that creates distinct zones within the device structure. By positioning barrier elements at specific locations, the invention enables controlled dopant distribution patterns that achieve necessary diffusion distances for performance while preventing excessive diffusion that causes short channel effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the diffusion barrier element injection region effectively reduces dopant diffusion, minimizes short channel effects, and enhances the semiconductor device's reliability and electric characteristics, leading to improved integration and performance without increasing costs.
Implementation Method 1
a diffusion barrier element injection region disposed in an upper region of the active part. The diffusion barrier element may be a halogen. The diffusion barrier element being configured to decrease diffusion distances of at least one of the first and second conductive dopants
Data Source
AI summary
A semiconductor device includes an isolation pattern disposed on a substrate, the isolation pattern defining an active part, a gate pattern crossing the active part on the substrate, the gate pattern including a dielectric pattern and a first conductive pattern, and the dielectric pattern being between the active part and the first conductive pattern, a pair of doping regions in the active part adjacent to side walls of the gate pattern, the gate pattern being between the pair of doping regions, and a diffusion barrier element injection region disposed in an upper region of the active part.