Semiconductor Cell Array Diffusion Barrier for Ion Protection
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Solution Overview
Problem
Field-effect-controlled semiconductor components face impaired electrical insulation and altered electrical properties due to the diffusion of mobile ions like Li+, Na+, and K+ through oxide layers, which can occur during production and throughout the component's lifetime.
Innovation Solution
A semiconductor component with a circumferential diffusion barrier is introduced to prevent the inward diffusion of mobile ions, specifically a silicon nitride layer or imide layer applied to the insulation, which acts as a barrier to protect the cell array from lateral ion penetration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide layers (gate oxide, field oxide, buffer oxide) are used for electrical insulation in field-effect-controlled semiconductor components, then electrical insulation is provided between gate electrode and body region, but mobile ions (Li+, Na+, K+) can penetrate and diffuse through the oxide layers, impairing electrical insulation properties and altering electrical properties such as use voltage
Solution Approach 1:
A diffusion barrier layer is introduced as an intermediary between the oxide insulation layers and the environment. This barrier layer specifically blocks mobile ions while allowing the oxide layers to maintain their electrical insulation function, thus resolving the contradiction between providing insulation and preventing ion penetration.
Solution Approach 2:
The insulation structure is transformed from a single-material oxide layer to a composite structure combining oxide layers with a diffusion barrier layer. This composite approach leverages the electrical insulation properties of oxides and the ion-blocking properties of the barrier layer, simultaneously achieving both insulation and ion protection.
2Reliability
If a diffusion barrier layer is added to prevent mobile ion penetration, then electrical insulation properties are protected, but device structure and manufacturing process become more complex
Solution Approach 1:
The diffusion barrier is implemented as a thin film layer that can be deposited conformally on the oxide surfaces. This thin-film approach provides effective ion blocking while adding minimal structural complexity and maintaining compatibility with existing semiconductor device geometries.
Solution Approach 2:
The barrier layer's material properties are specifically optimized to achieve high ion-blocking capability with minimal thickness. By adjusting the layer's composition and thickness parameters, effective protection is achieved while minimizing the impact on device structure and manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diffusion barrier effectively prevents mobile ions from entering the cell array, maintaining the electrical insulation properties and ensuring consistent performance of the semiconductor component.
Implementation Method 1
Ions such as Li+, Na+, K+ and others can penetrate into the oxide and diffuse within the various oxide layers. These ions are therefore also referred to as mobile ions.
Implementation Method 2
The insulation is bounded in lateral direction of the semiconductor body by a circumferential diffusion barrier. The diffusion barrier can prevent inward diffusion of mobile ions in lateral direction.
Data Source
AI summary
The invention relates to a semiconductor component comprising a semiconductor body, an insulation on the semiconductor body and a cell array arranged at least partly within the semiconductor body. The cell array has at least one p-n junction and at least one contact connection. The insulation is bounded in lateral direction of the semiconductor body by a circumferential diffusion barrier.