Semiconductor Conductive Structures with Diffusion Blocking Insulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices, the misalignment of conductive pattern structures during bonding can lead to metal diffusion through insulating layers, resulting in poor electrical characteristics and reliability due to the lack of effective diffusion blocking and shielding mechanisms.
Innovation Solution
The implementation of diffusion blocking insulation layers and shield patterns surrounding conductive pattern structures, which prevent metal diffusion by forming a barrier between the conductive patterns and the insulating layers, even when the patterns are misaligned.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conductive pattern structures are bonded together to form stacked structures, then integration degree increases, but metal diffusion occurs through insulating layers causing poor electrical reliability
Solution Approach 1:
A diffusion blocking insulation layer is introduced as an intermediary between the conductive pattern structure and the insulating interlayer. This intermediate layer prevents direct contact and metal diffusion while allowing the stacked structure to maintain electrical connectivity through controlled pathways, thus resolving the contradiction between integration and reliability
Solution Approach 2:
The insulating structure is segmented into multiple functional layers: the original insulating interlayer and an additional diffusion blocking insulation layer. This segmentation creates distinct functional zones where one layer handles electrical insulation and another layer specifically blocks metal diffusion, enabling both high integration and reliable electrical performance
2Manufacturing precision
If conductive patterns are misaligned during bonding, then manufacturing tolerance is exceeded, but metal diffusion increases due to lack of proper shielding
Solution Approach 1:
The diffusion blocking insulation layer is formed in advance on the conductive pattern structure before bonding occurs. This preliminary action ensures that even if misalignment occurs during bonding, the shielding mechanism is already in place to prevent metal diffusion, compensating for manufacturing tolerances
Solution Approach 2:
The diffusion blocking insulation layer acts as a cushioning barrier that anticipates potential misalignment issues. By pre-positioning this protective layer, the design absorbs the impact of alignment errors and prevents harmful metal diffusion that would otherwise occur due to misalignment
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes a substrate, a first conductive structure on the substrate, and a second conductive structure on the first conductive structure. The semiconductor device includes first and second metal-diffusion-blocking layers on respective sidewalls of the first and second conductive structures. The semiconductor device includes an insulating layer between the first and second metal-diffusion-blocking layers. Moreover, the semiconductor device includes a metal-diffusion-shield pattern in the insulating layer and spaced apart from the first conductive structure.