Semiconductor Diode Bridge Package with Electroplated Terminals
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Solution Overview
Problem
There is a demand for further reduction in size and thickness of semiconductor devices configuring diode bridge circuits, which is challenging due to the complexity of processing technology and potential reliability issues with existing methods.
Innovation Solution
A semiconductor device with a diode bridge circuit is developed by integrating four semiconductor chips into one package using external terminals formed by electroplating on a metal base substrate, with a resin molding and conductive members to reduce size and thickness while maintaining reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the size of individual diodes is decreased to reduce the overall semiconductor device size, then the device area is reduced, but the processing technology becomes more difficult and reliability deteriorates
Solution Approach 1:
The patent combines multiple diodes into a single integrated diode bridge circuit structure where four diode chips are mounted on a common leadframe substrate with integrated internal connections. This merging approach achieves compactness without requiring individual miniaturization of each diode, thus maintaining reliability while reducing overall device area.
Solution Approach 2:
The patent utilizes three-dimensional packaging arrangement by stacking and positioning diode chips in multiple layers and orientations on the leadframe substrate. This dimensional arrangement reduces the planar footprint of the device while maintaining adequate spacing and connection paths, thereby achieving area reduction without compromising reliability through excessive miniaturization.
2Area of stationary object
If the size of individual diodes is decreased to reduce the overall semiconductor device size, then the device area is reduced, but the processing technology becomes more difficult
Solution Approach 1:
The patent combines multiple diodes into a single integrated diode bridge circuit structure where four diode chips are mounted on a common leadframe substrate with integrated internal connections. This merging approach achieves compactness without requiring individual miniaturization of each diode, thus maintaining reliability while reducing overall device area.
Solution Approach 2:
The patent divides the diode bridge circuit into separate diode chip modules that are independently manufactured and then assembled onto the leadframe substrate. This segmentation allows each diode chip to be produced using standard processing techniques, avoiding the need for complex miniaturized processing while achieving compact overall device size through modular integration.
3Reliability
If traditional diode bridge circuit structure is used, then reliability is maintained, but the device size and thickness cannot be further reduced
Solution Approach 1:
The patent combines multiple diodes into a single integrated diode bridge circuit structure where four diode chips are mounted on a common leadframe substrate with integrated internal connections. This merging approach achieves compactness without requiring individual miniaturization of each diode, thus maintaining reliability while reducing overall device area.
Solution Approach 2:
The patent employs a nested packaging structure where diode chips are mounted on the leadframe substrate, which itself is enclosed within an outer packaging case. The leadframe substrate acts as an intermediate structure that integrates the diode chips and provides internal connections, creating a compact nested arrangement that reduces overall device area while maintaining reliability through proper structural support and connection paths.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the size and thickness of semiconductor devices configuring diode bridge circuits, improving their compactness and reliability compared to traditional designs.
Implementation Method 1
a plurality of external terminals have been formed by electroplating using a base material made of a metal as a mother substrate
Data Source
AI summary
Provided is a semiconductor device characterized by that first to fourth semiconductor chips are mounted on first to fourth electrodes formed by plating, respectively; the surface of the first semiconductor chip and the upper surface of a fifth electrode, the surface of the second semiconductor chip and the upper surface of the first electrode, the surface of the third semiconductor chip and the upper surface of the fourth electrode, the surface of the fourth semiconductor chip and the upper surface of the fifth electrode, and the upper surface of the second electrode and the upper surface of the third electrode are coupled to each other by first to fifth conductive members, respectively; and the back surfaces of the first to fifth electrodes are exposed from a resin molding. The invention makes it possible to reduce the size and the thickness of a semiconductor device configuring a diode bridge circuit.