Semiconductor Diode Current Distribution via Dummy Trenches

The patent applies local quality by providing the N+-type cathode region only in a specific region below the drift region rather than across the entire lower portion. This localized approach creates different electrical properties in different areas: the region with the cathode region has high carrier concentration for efficient current collection, while other regions maintain lower concentration to prevent current concentration at end portions. This resolves the contradiction by achieving good current distribution without requiring complex overall restructuring.

The patent uses local quality by restricting the N+-type cathode region to a specific area below the drift region rather than the entire lower portion. This creates localized high-carrier-concentration zones that provide good electrical contact where needed, while other areas maintain lower concentration to distribute the electric field more evenly. This approach maintains manufacturing simplicity while eliminating the harmful electric field concentration effect.

The patent applies segmentation by dividing the lower portion of the diode section into distinct functional regions: a specific region below the drift region containing the N+-type cathode region, and other regions with different doping characteristics. This segmentation allows each region to be optimized for its specific function - the cathode region for efficient current collection and other regions for electric field management - achieving enhanced reverse recovery capability through a systematically divided structure rather than a monolithic complex design.