Semiconductor Diode Edge Current Path for Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor diodes experience excessive heating at their center when current flows, leading to higher power losses due to inefficient heat dissipation from this region compared to the edges.
Innovation Solution
The semiconductor diode is designed with a configuration where the current path with the greatest heating per unit volume is shifted from the center to the edge, achieved by modifying the contact layers and semiconductor body structure, allowing for improved heat dissipation and reduced central heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the semiconductor diode uses a conventional structure with uniform current distribution, then the device is simple to manufacture, but the center of the semiconductor diode experiences excessive heating and higher power loss per unit volume
Solution Approach 1:
The patent applies local quality by creating an inner partial area with different electrical properties than the outer partial area. Specifically, the inner partial area has a higher electrical resistance or is electrically insulating, which redirects the current path to flow through the outer partial area. This local differentiation in electrical properties ensures that the region with greatest heating per unit volume is shifted from the center to the edge, improving heat dissipation efficiency while managing power loss.
2Reliability
If the current path is concentrated in the center for efficient conduction, then the electrical conductivity is improved, but the heat dissipation efficiency deteriorates due to poor thermal management from the center region
Solution Approach 1:
The patent implements asymmetry by introducing a non-uniform structure within the first main area, specifically creating an inner partial area that is electrically distinct from the outer partial area. This asymmetric electrical distribution causes the current to preferentially flow through the outer partial area, shifting the heating region from the geometric center to the periphery. This asymmetric current distribution improves thermal management by utilizing the better heat dissipation characteristics of the edge regions while maintaining acceptable power loss levels.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the maximum temperature at the center of the semiconductor diode during operation, from 173°C to 167°C, effectively minimizing power losses and improving thermal management.
Implementation Method 1
in the event of a current flow between the first and second contact layers, the centre of the semiconductor diode is the partial area of the surface of the semiconductor diode having the greatest heating per unit volume
Data Source
AI summary
A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.