Semiconductor Diode Fabrication via Low-Temperature Ion Implantation
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Solution Overview
Problem
Next-generation semiconductor memory devices require high-performance and low-power operation, but existing technologies face challenges in forming diodes without high-temperature epitaxial processes, which can damage substrates and limit device integration.
Innovation Solution
A semiconductor device is fabricated with a diode structure that includes impurity regions and isolation regions, where the diode is formed without a high-temperature epitaxial process, allowing for improved electrical properties and integration with other devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high-temperature epitaxial process is used to form a diode, then the diode can be formed with good electrical properties, but the substrate deteriorates and device integration is limited
Solution Approach 1:
The patent changes the formation process parameters from high-temperature epitaxial growth to low-temperature ion implantation followed by thermal annealing. This parameter change allows diode formation without exposing the substrate to damaging high temperatures, thus improving substrate survival while maintaining diode electrical properties through controlled impurity doping and activation
Solution Approach 2:
The patent replaces the chemical epitaxial growth mechanism with a physical ion implantation mechanism followed by thermal activation. This substitution avoids the high-temperature chemical reactions that cause substrate deterioration while achieving the same diode formation goal through controlled impurity introduction and activation
2Reliability
If a high-temperature epitaxial process is used to form a diode, then the diode structure can be formed, but device integration is limited
Solution Approach 1:
The patent changes the process temperature parameter from high-temperature epitaxial growth to low-temperature ion implantation and annealing. This enables compatibility with temperature-sensitive devices and substrates, significantly improving device integration capability while maintaining diode structure formation through controlled impurity doping
Solution Approach 2:
The patent segments the diode formation process into distinct steps: ion implantation for impurity introduction, followed by separate thermal annealing for activation and diffusion control. This segmentation allows independent optimization of each step and compatibility with other device fabrication processes, enhancing overall device integration
3Ease of manufacture
If conventional diode formation methods are used, then the process is simple, but the electrical properties and performance are insufficient for next-generation memory devices
Solution Approach 1:
The patent segments the diode formation into ion implantation and thermal annealing steps, which while multi-step, uses standard, well-controlled semiconductor fabrication processes. The segmentation enables precise control of impurity profiles and electrical properties, achieving superior performance for next-generation memory devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the electrical properties of the diode and prevents substrate deterioration, enabling the formation of high-performance semiconductor memory devices that operate efficiently at low power without the need for high-temperature processes.
Implementation Method 1
second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region
Data Source
AI summary
Provided is a semiconductor device. The semiconductor device includes a lower active region on a semiconductor substrate. A plurality of upper active regions protruding from a top surface of the lower active region and having a narrower width than the lower active region are provided. A lower isolation region surrounding a sidewall of the lower active region is provided. An upper isolation region formed on the lower isolation region, surrounding sidewalls of the upper active regions, and having a narrower width than the lower isolation region is provided. A first impurity region formed in the lower active region and extending into the upper active regions is provided. Second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region are provided. A method of fabricating the same is provided as well.