Semiconductor Temperature Diode Manufacturing via Laser Annealing
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Solution Overview
Problem
Conventional manufacturing methods for semiconductor devices with integrated temperature-sensing diodes result in significant variation of forward voltage (Vf), leading to unstable temperature detection accuracy due to film thickness dependencies and ion implantation-related channeling phenomena.
Innovation Solution
A manufacturing method involving the deposition of a thin film semiconductor layer on a semiconductor substrate with an insulating film, where first and second impurity ions are ion-implanted under specific conditions to form a diode with reduced film thickness dependency and channeling effects, thereby stabilizing the forward voltage and improving temperature detection accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diode for detecting temperature is formed by ion implantation in a polycrystalline silicon layer, then the diode can be integrated with the main semiconductor element, but the forward voltage varies significantly due to film thickness dependencies and ion implantation channeling phenomena
Solution Approach 1:
The patent changes the physical state and parameters of the semiconductor layer by using laser annealing to melt and recrystallize the polycrystalline silicon layer, transforming it into a single-crystal or highly-oriented crystal structure. This parameter change eliminates film thickness dependencies and ion implantation channeling phenomena, thereby stabilizing the forward voltage and improving temperature detection accuracy
Solution Approach 2:
The patent replaces the conventional ion implantation process with a combination of laser annealing and subsequent low-energy ion implantation. The laser annealing step substitutes for traditional thermal diffusion methods, providing more precise control over impurity distribution and eliminating the channeling effects that occur in polycrystalline materials
2Manufacturing precision
If the polycrystalline silicon layer thickness is increased to reduce channeling effects, then ion implantation stability improves, but film thickness variation causes forward voltage variation
Solution Approach 1:
The patent fundamentally changes the crystal structure parameter of the silicon layer through laser-induced melting and recrystallization. This transforms the material from polycrystalline to single-crystal or highly-oriented crystal, eliminating the relationship between film thickness and channeling effects while also eliminating film thickness dependency on forward voltage
3Ease of manufacture
If conventional ion implantation is used to form the diode, then the manufacturing process is simple, but channeling phenomena occur leading to unstable forward voltage
Solution Approach 1:
The patent introduces laser annealing as a new step that substitutes for conventional thermal processing. The laser provides rapid, localized heating that melts and recrystallizes the silicon layer in situ, eliminating channeling phenomena without requiring complex process modifications or additional equipment beyond standard semiconductor fabrication capabilities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces the variation of forward voltage (Vf) and enhances the stability and accuracy of temperature detection in semiconductor devices, minimizing the impact of film thickness variations and channeling phenomena.
Implementation Method 1
ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer
Implementation Method 2
depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween
Data Source
AI summary
A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer.