Semiconductor Heat Dissipation via Integrated Diode Substrate
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Solution Overview
Problem
High-output semiconductor devices for mobile communication terminals face challenges in heat dissipation, leading to thermal runaway and degradation of electric characteristics, particularly due to increased chip area and reduced mechanical strength when using via holes or heat dissipation plates, which hinder downsizing and efficiency.
Innovation Solution
A semiconductor device with heat dissipating means formed between adjacent unit semiconductor elements, using conductive layers and wiring to connect electrodes, allowing heat to be dissipated directly to the substrate while maintaining electrical insulation, thereby reducing chip area and enhancing thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If via holes or heat dissipation plates are used to dissipate heat, then heat dissipation performance is improved, but chip area increases and mechanical strength decreases
Solution Approach 1:
The patent merges the heat dissipation function with the existing substrate structure by forming heat dissipation regions directly on the substrate beneath the semiconductor elements. This integration eliminates the need for separate via holes or heat dissipation plates, achieving effective heat dissipation without increasing chip area.
Solution Approach 2:
The patent transitions from planar heat dissipation structures (via holes, plates) to a vertical heat dissipation path by forming heat dissipation regions that extend from the substrate surface downward. This vertical dimension allows heat to be dissipated through the substrate thickness without occupying additional lateral chip area.
2Temperature
If via holes or heat dissipation plates are used to dissipate heat, then heat dissipation performance is improved, but mechanical strength decreases
Solution Approach 1:
The heat dissipation regions are merged with the substrate structure itself, forming an integrated thermal management system. This approach avoids the mechanical weakening caused by through-substrate via holes or additional heat dissipation plates, maintaining substrate integrity and mechanical strength while achieving effective heat dissipation.
3Power
If multiple unit semiconductor elements are arranged in parallel to increase output power, then output power is improved, but thermal coupling effect increases and temperature unbalance occurs
Solution Approach 1:
The patent applies local quality by forming heat dissipation regions with different characteristics at different locations on the substrate. Central regions have enhanced heat dissipation capabilities to counteract the greater thermal coupling effect, while peripheral regions have standard heat dissipation. This localized differentiation balances the temperature distribution across the substrate, preventing temperature unbalance while maintaining high output power from multiple parallel semiconductor elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high heat dissipation performance without increasing the chip area, thereby preventing thermal runaway and improving the reliability and efficiency of high-output semiconductor devices.
Implementation Method 1
heat dissipating means for dissipating heat generated in the unit semiconductor elements
Data Source
AI summary
A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.