Semiconductor Devices With Dipole Forming Element Concentration Gradients
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving improved operating characteristics and threshold voltage adjustments due to complex manufacturing processes and potential deterioration from impurities, particularly in multi-threshold voltage devices.
Innovation Solution
The semiconductor device incorporates a substrate with varying concentrations of a dipole forming element in high-k dielectric films and work function adjustment films, allowing for different threshold voltages in different regions through controlled diffusion and annealing processes, simplifying the manufacturing process and facilitating easier removal of work function adjustment films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing processes are used for multi-threshold voltage devices, then threshold voltage adjustments can be achieved, but the manufacturing process becomes complex and impurity-related deterioration occurs
Solution Approach 1:
The patent applies parameter changes by varying the concentration of dipole forming elements in the high-k dielectric film across different regions. By controlling the amount and distribution of dipole forming elements, different threshold voltages are achieved in different transistor regions without requiring complex multi-step manufacturing processes. This directly resolves the contradiction by simplifying the manufacturing process while maintaining precise threshold voltage control through compositional parameter variation.
Solution Approach 2:
The patent implements local quality by creating spatially varying concentrations of dipole forming elements within the high-k dielectric film. Different regions of the device have different dipole forming element concentrations, which locally adjusts the threshold voltage according to specific device requirements. This allows precise local threshold voltage control while using a unified manufacturing approach, reducing overall process complexity.
2Manufacturing precision
If work function adjustment films are used to control threshold voltage, then threshold voltage adjustment is achieved, but impurity incorporation and potential deterioration occur
Solution Approach 1:
The patent replaces work function adjustment films with a parameter-based approach, varying the concentration of dipole forming elements in the high-k dielectric film. This eliminates the need for separate work function adjustment films and their associated impurity risks, while achieving the same threshold voltage control function through compositional variation in the dielectric layer.
Solution Approach 2:
The patent extracts and removes the work function adjustment film layer from the device structure, replacing its function with dipole forming elements embedded in the high-k dielectric film. This extraction eliminates the source of impurity-related deterioration while maintaining threshold voltage control capability through the dipole forming element concentration gradient.
3Adaptability or versatility
If multiple work function adjustment films with different thicknesses are used, then different threshold voltages are achieved, but the manufacturing process and film removal become more difficult
Solution Approach 1:
The patent merges the functions of multiple work function adjustment films into a single high-k dielectric film layer by incorporating dipole forming elements at varying concentrations. This consolidation eliminates the need for multiple separate films and their sequential removal steps, simplifying the manufacturing process while maintaining multi-threshold voltage capability through compositional variation within the unified dielectric layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and operating characteristics of semiconductor devices by simplifying the manufacturing process and improving threshold voltage adjustments, while reducing the complexity and potential impurity-related issues in multi-threshold voltage devices.
Implementation Method 1
varying concentrations of a dipole forming element in high-k dielectric films and work function adjustment films, allowing for different threshold voltages in different regions through controlled diffusion and annealing processes
Implementation Method 2
varying concentrations of a dipole forming element in high-k dielectric films and work function adjustment films, allowing for different threshold voltages in different regions through controlled diffusion and annealing processes
Data Source
AI summary
Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.