Semiconductor Package Structure Direct Metal Bonding Thermal Management
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Solution Overview
Problem
Current 3D packaging technologies face thermal issues due to increased micro component stacking, which leads to signal transmission delays, power consumption increases, and inadequate heat dissipation, primarily caused by the use of metal wires between stacked components.
Innovation Solution
A package structure where semiconductor structures are directly bonded using metal layers, eliminating the need for metal wires and reducing the distance between components, thereby improving signal speed, reducing power consumption, and enhancing thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If metal wires are used to connect stacked semiconductor components, then electrical connection is achieved, but signal transmission delay increases and thermal conductivity decreases
Solution Approach 1:
The patent removes metal wires from the packaging structure and replaces them with direct bonding between semiconductor components. This extraction of the metal wire intermediary eliminates the source of signal delay and thermal resistance while maintaining electrical connectivity through direct component-to-component bonding.
Solution Approach 2:
The patent employs asymmetric bonding configurations where different bonding areas are allocated for different functions: circuit area for electrical connection and support area for mechanical support. This asymmetric design optimizes both signal transmission and thermal management by dedicating specific regions to specific functions.
2Productivity
If multiple semiconductor components are stacked closely, then integration density increases, but heat dissipation becomes inadequate
Solution Approach 1:
The patent applies local quality by creating distinct bonding regions with different properties: circuit area bonding for electrical connectivity and support area bonding for thermal management. The support area is specifically designed with larger bonding surfaces and direct thermal pathways to facilitate heat dissipation from high-density stacked components.
Solution Approach 2:
The patent transitions from two-dimensional planar connections to three-dimensional vertical stacking with multi-layer bonding structures. By utilizing vertical bonding interfaces and multiple bonding layers, the design achieves high integration density while maintaining adequate heat dissipation pathways through the vertical dimension.
3Temperature
If bonding area between stacked components is increased, then thermal conductivity improves, but manufacturing complexity increases
Solution Approach 1:
The patent segments the bonding area into distinct circuit area and support area regions, each with optimized bonding characteristics. This segmentation allows thermal management to be addressed in the support area without complicating the electrical bonding process in the circuit area, thereby improving thermal conductivity while maintaining manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively shortens the distance between semiconductor structures, reduces signal transmission delays, lowers power consumption, and improves thermal conductivity, addressing the thermal and performance issues in integrated circuits.
Implementation Method 1
the first metal layer of one semiconductor structure is in contact with and bonded to the third metal layer of another semiconductor structure adjacent to the one semiconductor structure
Implementation Method 2
enhancing thermal conductivity
Data Source
AI summary
A package structure includes at least two semiconductor structures that are stacked onto one another. The first surface of one semiconductor structure of the at least two semiconductor structures that are stacked onto one another directly faces toward the second surface of another semiconductor structure of the at least two semiconductor structures which is adjacent to said one semiconductor structure; the first metal layer of said one semiconductor structure is in contact with and bonded to the third metal layer of said another semiconductor structure; and the second metal layer of said one semiconductor structure is in contact with and bonded to the fourth metal layer of said another semiconductor structure.