Semiconductor Interconnect Structure With Direct Bonding Pad Connection
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Solution Overview
Problem
Existing semiconductor device manufacturing methods require multiple steps to electrically connect a bonding pad to a via plug, including forming a via hole and via plug, which increases manufacturing complexity and cost, and results in higher electrical resistance.
Innovation Solution
A semiconductor device structure and manufacturing method that electrically connects a bonding pad to a via plug by forming an opening and a metal wiring layer directly on the via plug, omitting the need for an additional via plug, thereby reducing manufacturing steps and cost, and lowering electrical resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a via hole and via plug are formed to electrically connect the bonding pad to the via plug, then electrical connection is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent extracts and eliminates the intermediate via plug structure from the conventional connection path. Instead of forming a via hole and filling it with a via plug to achieve electrical connection, the invention directly forms a contact hole through the insulating film to expose the semiconductor layer, thereby removing the unnecessary via plug formation steps and reducing manufacturing complexity while maintaining reliable electrical connection.
2Reliability
If multiple steps are used to form via hole and via plug, then electrical connection is established, but manufacturing cost increases
Solution Approach 1:
The invention removes the via plug formation process entirely from the manufacturing sequence. By directly forming a contact hole through the insulating film to expose the semiconductor layer, the patent eliminates multiple manufacturing steps (via hole formation, via plug material deposition, via plug patterning, and via plug etching), thereby significantly reducing manufacturing cost while ensuring reliable electrical connection between the bonding pad and semiconductor layer.
Solution Approach 2:
The patent skips the intermediate via plug formation steps by directly creating a contact hole through the insulating film to reach the semiconductor layer. This rushing through approach bypasses the conventional multi-step via plug formation process, reducing both manufacturing time and cost while achieving the same electrical connection function.
3Reliability
If via plug is formed through via hole, then electrical connection is achieved, but electrical resistance increases
Solution Approach 1:
The patent extracts the via plug structure that contributes to electrical resistance. By directly forming a contact hole through the insulating film to expose the semiconductor layer without inserting a via plug, the invention eliminates the additional contact resistance and material interface resistance that would be introduced by the via plug, thereby achieving lower overall electrical resistance while maintaining reliable electrical connection.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.