Semiconductor Discharge Path for Outgas Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices with hermetically sealed chambers, outgas generated during bonding affects the pressure, making it difficult to achieve low pressures necessary for high Q-factor vibrators, as enlarging the chamber does not effectively reduce the outgas presence.
Innovation Solution
A semiconductor device configuration with a through hole in the second substrate and a discharge path between the hermetically sealed chamber and the through hole allows outgas to be discharged during heat treatment, reducing chamber pressure and enhancing outgas release.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the hermetically sealed chamber is enlarged to reduce outgas concentration, then the outgas presence decreases, but the chamber volume increases and device size grows
Solution Approach 1:
The patent extracts the outgas removal function from the chamber design by introducing a discharge path that actively removes outgas from the hermetically sealed chamber. Instead of relying on chamber enlargement to dilute outgas concentration, the system extracts harmful outgas through a dedicated discharge path connected to a vacuum pump, thereby reducing outgas concentration without increasing chamber volume.
Solution Approach 2:
The patent introduces a discharge path as an intermediary component between the hermetically sealed chamber and the external environment. This discharge path serves as a mediator that allows controlled removal of outgas from the sealed chamber, enabling pressure reduction and outgas concentration control without compromising the hermetic seal or requiring chamber enlargement.
2Reliability
If the chamber is hermetically sealed to maintain low pressure, then the Q-factor increases, but outgas accumulates and prevents achieving sufficiently low pressures
Solution Approach 1:
The patent applies preliminary action by providing a discharge path that is prepared and positioned within the hermetically sealed chamber before operation. This discharge path is pre-configured to enable outgas removal, allowing the system to achieve and maintain low pressure conditions necessary for high Q-factor operation without being hindered by outgas accumulation.
Solution Approach 2:
The patent ensures continuous useful action by maintaining an active discharge path that continuously removes outgas from the hermetically sealed chamber. This continuous outgas removal process allows the chamber to maintain consistently low pressure conditions, enabling the vibrator to operate at high Q-factor without pressure fluctuations or outgas accumulation interfering with performance.
3Stress or pressure
If a discharge path is added to remove outgas, then pressure reduction is achieved, but the device structure becomes more complex
Solution Approach 1:
The patent utilizes thin film technology by forming the discharge path through a through-hole in a thin substrate. This approach allows the discharge path to be integrated into the existing substrate structure with minimal added complexity. The thin film substrate can be easily processed to include through-holes and conductive connections, enabling outgas removal functionality without significantly increasing overall device structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The discharge path effectively reduces the pressure in the hermetically sealed chamber by allowing outgas to be readily released, improving the Q-factor of vibrators and maintaining bonding strength.
Implementation Method 1
A discharge path is provided, at a position located between the hermetically sealed chamber and the through hole for releasing outgas from the hermetically sealed chamber to the through hole
Implementation Method 2
allows outgas to be discharged during heat treatment, reducing chamber pressure and enhancing outgas release
Data Source
AI summary
In a semiconductor device, a first substrate and a second substrate are bonded to each other through an insulating film. A hermetically sealed chamber is provided between the first substrate and the second substrate, and a sensing part is enclosed in the hermetically sealed chamber. The second substrate has a through hole penetrating in a stacking direction of the first substrate and the second substrate and exposing the first surface of the first substrate. A penetrating electrode is disposed on a wall surface of the through hole of the second substrate, and is electrically connected to the sensing part. A discharge path is provided, at a position located between the hermetically sealed chamber and the through hole for releasing outgas generated during bonding from the hermetically sealed chamber to the through hole.