Semiconductor Manufacturing Division Exposure Boundary Issues
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Solution Overview
Problem
The performance of semiconductor apparatuses, particularly photoelectric conversion apparatuses, is not sufficiently improved due to inadequate processing after division exposure, leading to characteristic deterioration and issues like pixel characteristic differences and discontinuities at exposure region boundaries.
Innovation Solution
A method of manufacturing semiconductor apparatuses involving the formation of resist patterns using multiple photomasks for different circuit sections, allowing for optimized etching processes that enhance the characteristics of each section, including the use of positive photoresists to ensure proper pattern formation and minimize etching damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If division exposure is performed for large-size photoelectric conversion apparatus, then the exposure area can exceed the maximum exposure range, but processing after division exposure causes characteristic deterioration and pixel characteristic differences at boundaries
Solution Approach 1:
The patent applies segmentation by dividing the exposure process into multiple separate exposures using different photomasks for different circuit sections (pixel circuit section and peripheral circuit section). This allows each section to be exposed and processed independently, avoiding the boundary issues that arise from single large-area exposure or conventional division exposure methods.
Solution Approach 2:
The patent implements local quality by forming separate resist patterns for different circuit sections with optimized characteristics for each section. The pixel circuit section and peripheral circuit section receive tailored etching processes according to their specific requirements, ensuring optimal performance for each region while maintaining overall device functionality.
2Area of stationary object
If conventional division exposure method is used, then large area exposure is achieved, but etching damage and noise increase due to inadequate post-processing
Solution Approach 1:
The patent applies local quality by implementing section-specific etching processes tailored to the unique requirements of each circuit section. The pixel circuit section undergoes etching optimized for high-density transistor structures, while the peripheral circuit section receives etching parameters optimized for lower-density structures, thereby minimizing etching damage and noise for each region.
Solution Approach 2:
The patent employs preliminary action by forming separate resist patterns before etching, with each resist pattern specifically designed and formed for its corresponding circuit section. This preliminary pattern formation allows for controlled and minimized etching damage by having precise masks in place before the etching process begins.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the manufacture of semiconductor apparatuses with improved performance by optimizing the etching processes for both peripheral and pixel circuit sections, reducing noise and etching damage, and enhancing the overall characteristics of the photoelectric conversion apparatus.
Implementation Method 1
exposing the first photoresist on the first portion using a first photomask, exposing the first photoresist on the second portion using a second photomask
Implementation Method 2
forming a first resist pattern by developing the first photoresist on the first portion and the second portion
Data Source
AI summary
A method of manufacturing a semiconductor apparatus comprises forming a first photoresist on each of a first portion and a second portion of a member, exposing the first photoresist on the first portion using a first photomask, exposing the first photoresist on the second portion using a second photomask, forming a first resist pattern by developing the first photoresist on the first portion and the second portion, etching the first portion and the second portion using the first resist pattern as a mask, forming a second photoresist on a third portion of the member, exposing the second photoresist on the third portion using a third photomask, forming a second resist pattern by developing the second photoresist on the third portion, and etching the third portion using the second resist pattern as a mask.