Semiconductor Component With Inhomogeneous Dopant Profile
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing DMOS power transistors face a trade-off between reducing on resistivity and maintaining avalanche strength, as measures to minimize on resistivity often impair avalanche behavior.
Innovation Solution
A semiconductor component with a dopant concentration profile that includes a minimum in the second semiconductor region, which improves avalanche strength while optimizing on resistivity, achieved through a specific doping profile and compensation doping that enhances the breakdown voltage and current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If measures are taken to reduce on resistivity, then on resistivity is reduced, but avalanche strength is impaired
Solution Approach 1:
The patent applies local quality by creating an inhomogeneous dopant concentration profile in the drift zone, with a minimum positioned at a specific distance from the pn junction. This localized variation in dopant concentration allows different regions to serve different functions: the minimum region enhances avalanche strength while regions closer to the junction maintain low resistance, thus resolving the contradiction between avalanche strength and on resistivity
Solution Approach 2:
The patent changes the dopant concentration parameter by introducing a minimum in the drift zone at a specific position. This parameter modification allows simultaneous optimization of avalanche strength (through the minimum) and on resistivity (through the overall doping profile), breaking the traditional trade-off between these two parameters
2Loss of energy
If dopant concentration in the second semiconductor region is reduced, then on resistivity is reduced, but avalanche behavior deteriorates
Solution Approach 1:
The patent applies local quality by creating a dopant concentration minimum at a specific position in the drift zone rather than uniformly reducing dopant concentration. This localized approach allows the region with the minimum to enhance avalanche behavior while other regions maintain appropriate doping levels for low on resistivity, thus resolving the contradiction
Solution Approach 2:
The patent introduces a spatial dimension to the dopant concentration profile by positioning the minimum at a specific distance from the pn junction. This dimensional approach allows independent optimization of avalanche behavior (at the minimum location) and on resistivity (in the overall profile), transforming a single-parameter trade-off into a multi-dimensional optimization problem
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases avalanche strength and reduces on resistivity, delaying the 'field flip-over' and parasitic bipolar transistor turn-on, thereby improving the overall performance and reliability of power transistors.
Implementation Method 1
a very good avalanche strength is furthermore also required for the off-state case
Implementation Method 2
The second semiconductor region has a compensation doping of the second conduction type with at least one maximum between first and second junction region
Data Source
AI summary
A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.