Semiconductor Doped Strips for Low On-State Resistance
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Solution Overview
Problem
Conventional methods for increasing operating voltage in semiconductor devices, such as forming field plate regions with the same surface profile but different depth ranges, are limited in reducing resistance and increasing on-state current efficiency.
Innovation Solution
A semiconductor structure comprising doped strips and a doped top region with opposite conductivity types, separated from each other, is formed between doped electrodes, reducing on-state resistance and increasing on-state current efficiency while enabling high-voltage operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If field plate regions with the same surface profile and different depth ranges are formed on a drift region by using the single mask, then the operating voltage is increased, but the resistance reduction and on-state current increase are still limited
Solution Approach 1:
The patent divides the doped region into multiple separated doped strips instead of using a continuous field plate region. These doped strips are formed at different depths within the drift region, creating a segmented structure that reduces on-state resistance more effectively while maintaining high breakdown voltage. The segmentation allows for optimized current flow paths without compromising voltage blocking capability.
Solution Approach 2:
The patent applies different doping characteristics to different regions: the doped strips provide localized high doping concentration for current conduction, while the regions between strips maintain lower doping for voltage blocking. This local quality differentiation enables simultaneous optimization of on-state resistance and breakdown voltage, achieving 15% resistance reduction and 17.5% current increase while maintaining over 700V breakdown voltage.
2Productivity
If the feature size is reduced in semiconductor technology, then the efficiency and density are improved, but the on-state current and resistance characteristics become more difficult to optimize
Solution Approach 1:
The patent transitions from two-dimensional surface-level field plate structures to three-dimensional vertically-separated doped strips within the drift region. By utilizing the depth dimension, the invention creates multiple doping layers at different vertical positions, enabling better control of electrical characteristics while maintaining small footprint and high integration density. This dimensional approach allows independent optimization of current flow and voltage blocking without being constrained by surface area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure achieves a 15% reduction in on-state resistance and a 17.5% increase in on-state current, maintaining a breakdown voltage over 700 V, enhancing device efficiency and performance.
Implementation Method 1
A semiconductor structure comprises a first doped well, a first doped electrode, a second doped electrode, doped strips and a doped top region. The doped strips are on the first doped well between the first doped electrode and the second doped electrode. The doped top region is on the doped strip and extended on the first doped well between the doped strips. The first doped well and the doped top region have a first conductivity type. The doped strips have a second conductivity type opposite to the first conductivity type.
Data Source
AI summary
A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a first doped well, a first doped electrode, a second doped electrode, doped strips and a doped top region. The doped strips are on the first doped well between the first doped electrode and the second doped electrode. The doped strips are separated from each other. The doped top region is on the doped strips and extended on the first doped well between the doped strips. The first doped well and the doped top region have a first conductivity type. The doped strips have a second conductivity type opposite to the first conductivity type.