Semiconductor Device With Doping Gradient Control
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving optimal doping concentration gradients and layer thicknesses for improved light-emission efficiency and electrical characteristics, particularly in light-emitting diodes, where the distribution of electrons and recombination rates are not efficiently managed.
Innovation Solution
The semiconductor device incorporates a first conductivity-type semiconductor structure with alternating layers of specific doping concentrations and thicknesses, a second conductivity-type semiconductor structure, and an active structure, with a nitride-containing layer and spacer layer to enhance electron distribution and recombination rates, while maintaining a controlled doping concentration gradient and layer thickness ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional doping concentration gradients are used in semiconductor layers, then manufacturing process is simpler, but light-emission efficiency and electrical characteristics are not optimized
Solution Approach 1:
The patent applies parameter changes by systematically varying doping concentrations across multiple alternating layers (first layers with first doping concentration, second layers with second doping concentration) to optimize electron distribution and recombination rates. This controlled parameter variation improves light-emission efficiency while maintaining manageable manufacturing complexity through standardized layering patterns.
Solution Approach 2:
The patent implements local quality by creating spatially varying doping concentrations within different layers. Each layer is assigned specific doping concentrations tailored to its functional requirements, with the first conductivity-type semiconductor structure containing alternating layers of different doping levels to optimize local electron distribution and recombination characteristics in specific regions.
2Reliability
If layer thicknesses are not precisely controlled, then manufacturing is easier, but electron distribution and recombination rates are not optimized
Solution Approach 1:
The patent controls the thickness parameter of alternating layers to optimize electrical characteristics. By precisely managing the thickness of first layers and second layers with different doping concentrations, the invention achieves optimal electron distribution and recombination rates, improving overall device performance through controlled geometric parameters.
3Reliability
If forward voltage is not reduced, then device design is simpler, but light-emission efficiency decreases
Solution Approach 1:
The patent reduces forward voltage by implementing localized doping optimizations in alternating layers. The first conductivity-type semiconductor structure contains first layers and second layers with different doping concentrations, creating local regions with optimized electrical properties that collectively reduce the overall forward voltage while enhancing light-emission efficiency.
Solution Approach 2:
The patent employs a composite structure with alternating layers of different doping concentrations and conductivity types. This composite architecture combines n-type and p-type layers with varying doping levels to create a multi-functional structure that simultaneously optimizes electron distribution, reduces forward voltage, and enhances light emission through synergistic interactions between layers.
Data Source
AI summary
The semiconductor device includes a first conductivity-type semiconductor structure comprising a first stack and a second stack, wherein the first stack comprises alternate first layers and second layers, the second stack comprises alternate third layers and fourth layers. The semiconductor device includes a second conductivity-type semiconductor structure on the first conductivity-type semiconductor and includes an active structure between the first conductivity-type semiconductor structure and the second conductivity-type semiconductor structure. The first stack is between the active structure and the second stack, and a first difference between a maximum of the first doping concentration of one of the first layers and a minimum of the second doping concentration of one of the second layers is less than a second difference between a maximum of the third doping concentration of one of the third layers and a minimum of the fourth doping concentration of one of the fourth layers.