Semiconductor Doping Layout for Low-Cost Electrical Performance
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Solution Overview
Problem
The challenge is to provide a semiconductor device at a low cost while maintaining effective electrical characteristics.
Innovation Solution
A semiconductor device is designed with a semiconductor substrate that includes an N-type region with a specific acceptor concentration ratio to the carrier concentration, allowing for efficient manufacturing through a method involving donor implantation and heat treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high donor concentration is introduced into the N-type region to improve electrical characteristics, then the electrical performance is enhanced, but the bulk-acceptor concentration also increases which degrades the electrical characteristics
Solution Approach 1:
The patent divides the semiconductor substrate into distinct regions with different doping characteristics: an N-type region with high donor concentration for good electrical performance, and a P-type region with acceptor concentration controlled at 0.001-0.1 times the donor concentration to minimize bulk-acceptor effects. This spatial segmentation allows each region to optimize its electrical properties independently.
Solution Approach 2:
The patent applies local quality by creating a non-uniform doping distribution where the N-type region has high donor concentration (1.0×10^15 to 1.0×10^18 atoms/cm³) for excellent electrical characteristics, while the P-type region maintains very low acceptor concentration (0.001-0.1 times the donor concentration) to prevent bulk-acceptor degradation. This localized optimization resolves the contradiction between improving electrical characteristics and controlling bulk-acceptor concentration.
2Ease of manufacture
If conventional doping methods are used to create N-type regions, then manufacturing is simpler, but achieving high donor concentration without increasing bulk-acceptor concentration is difficult
Solution Approach 1:
The patent employs preliminary action by first forming the P-type region with controlled acceptor concentration, then subsequently introducing donors into the N-type region. This sequential approach allows precise control of donor concentration (1.0×10^15 to 1.0×10^18 atoms/cm³) without being constrained by the acceptor concentration, achieving high manufacturing precision while maintaining ease of manufacture through standard multi-step doping processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of semiconductor devices with improved electrical characteristics while reducing production costs, specifically by achieving a high donor concentration in the N-type region without significantly increasing the bulk-acceptor concentration.
Implementation Method 1
a first inverting step configured to form an N-type region including a center position in a depth direction of a semiconductor substrate by implanting a donor into the P-type semiconductor substrate
Implementation Method 2
a first inverting step configured to form an N-type region including a center position in a depth direction of a semiconductor substrate by implanting a donor into the P-type semiconductor substrate and heat treatment
Data Source
AI summary
Provided is a semiconductor device including a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. One or more N-type regions with an N-type conductivity are provided in the semiconductor substrate such that at least one N-type region among the one or more N-type regions includes the center position of the semiconductor substrate. An entire portion of the semiconductor substrate includes a bulk-acceptor having a bulk-acceptor concentration. A carrier concentration in all of the one or more N-type regions is higher than the bulk-acceptor concentration.