Semiconductor Doping Profile With Hydrogen-Helium Lifetime Control
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Solution Overview
Problem
Existing semiconductor technologies face challenges in accurately controlling carrier concentration distribution, particularly in forming regions with high hydrogen concentration that accurately match oxygen and helium concentrations to optimize carrier concentration and lifetime control.
Innovation Solution
A semiconductor device and fabrication method involving a hydrogen-containing region with specific helium and hydrogen concentration distributions, where hydrogen concentration peaks and troughs are controlled to achieve precise carrier concentration profiles, and helium is implanted to form a lifetime control region with reduced carrier lifetime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen is implanted to form an N type region, then carrier concentration can be controlled, but the shape of carrier concentration distribution cannot be controlled with high accuracy
Solution Approach 1:
The patent divides the hydrogen concentration distribution into multiple distinct regions (peaks and troughs) at different depth positions. By implanting hydrogen at multiple energies to create separate concentration peaks, the patent achieves precise control over carrier concentration distribution shape, resolving the contradiction between manufacturing precision and device complexity.
Solution Approach 2:
The patent creates localized hydrogen concentration peaks at specific depth positions within the semiconductor substrate. Each peak corresponds to a specific functional region, allowing different areas to have tailored carrier concentrations. This local quality approach enables high-accuracy control of carrier concentration distribution while maintaining manageable process complexity.
2Reliability
If hydrogen concentration is increased to control carrier concentration, then carrier behavior can be optimized, but oxygen and helium concentration matching becomes difficult
Solution Approach 1:
The patent establishes specific quantitative relationships between hydrogen, oxygen, and helium concentrations (e.g., hydrogen concentration ≥ 1/10 of oxygen concentration in trough portions, hydrogen concentration ≥ 1/2 of oxygen concentration at peaks). These feedback-based concentration ratios ensure reliable carrier behavior while maintaining precise manufacturing control through measurable parameters.
Solution Approach 2:
The patent controls the relative concentrations of hydrogen, oxygen, and helium by adjusting implantation energies and doses. By changing these parameters systematically, the patent achieves the desired concentration ratios that optimize carrier behavior while maintaining manufacturing precision.
3Duration of action of moving object
If helium is implanted to form a lifetime control region, then carrier lifetime can be reduced, but the complexity of concentration distribution increases
Solution Approach 1:
The patent combines helium implantation with the existing multi-peak hydrogen concentration profile. By merging the lifetime control function (via helium) with the carrier concentration control function (via hydrogen peaks), the patent achieves both objectives without proportionally increasing device complexity. The helium concentration peak is integrated into the overall concentration distribution structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high-accuracy control of carrier and donor concentration distributions, enhancing the controllability and performance of semiconductor devices by adjusting hydrogen and helium concentrations to optimize carrier behavior and reduce defects.
Implementation Method 1
a hydrogen containing region 102 that contains hydrogen... formed by implanting hydrogen to the semiconductor substrate
Implementation Method 2
helium may be implanted to the semiconductor substrate so that at least some region of the hydrogen containing region contains helium
Data Source
AI summary
A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.