Semiconductor Doping Structure for Low Leakage and High Mobility
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Solution Overview
Problem
The doping type and concentration in the source and drain regions of junction transistors are inconsistent with the channel region, leading to reduced mobility and control ability, and increased leakage current, affecting transistor performance.
Innovation Solution
A semiconductor structure with a source doped region, a drain doped region, a lightly doped region, and an intrinsic region, where the lightly doped region is adjacent to the source doped region and the intrinsic region is adjacent to the drain doped region, with the doping concentration of the source and drain regions being greater than that of the lightly doped region, which reduces electric field strength and Coulomb scattering, improving carrier mobility and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel region is heavily doped to improve conductivity, then the electrical conductivity is improved, but the carrier mobility and gate control ability are reduced
Solution Approach 1:
The patent applies local quality by creating different doping concentrations in different regions of the semiconductor structure. The source and drain regions are heavily doped to ensure good electrical contact and conductivity, while the channel region maintains a lighter doping level to preserve carrier mobility and gate control. This spatial variation in doping quality resolves the contradiction between conductivity and mobility.
Solution Approach 2:
The semiconductor structure is segmented into distinct regions with different doping characteristics: source/drain regions, channel region, and lightly doped regions. This segmentation allows each region to be optimized independently for its specific function, with heavily doped source/drain for conductivity and lightly doped channel for mobility, thereby resolving the contradiction.
2Reliability
If the source and drain are heavily doped to improve contact, then the electrical contact is improved, but the leakage current increases
Solution Approach 1:
The patent introduces lightly doped regions as intermediary zones between the heavily doped source/drain and the channel region. These intermediate regions act as transition zones that prevent the direct interaction between heavy doping and the channel, thereby reducing leakage current while maintaining good electrical contact in the source/drain regions.
Solution Approach 2:
The patent implements local quality by applying heavy doping only to the source and drain regions where electrical contact is critical, while maintaining lighter doping in the channel and introducing lightly doped transition regions. This localized doping strategy ensures good contact where needed while minimizing leakage current generation.
3Reliability
If the doping concentration is increased to improve conductivity, then the electrical conductivity is improved, but the control ability of the gate to the channel region is reduced
Solution Approach 1:
The patent applies local quality by maintaining different doping concentrations in different regions. The channel region is kept lightly doped to ensure high gate control ability, while the source and drain regions are heavily doped for conductivity. This spatial differentiation resolves the contradiction between conductivity and gate control.
Solution Approach 2:
The semiconductor structure is segmented into functionally distinct regions with optimized doping levels. The channel region is separated from the heavily doped source/drain by lightly doped regions, allowing the channel to maintain high gate control while the source/drain provide excellent electrical contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces leakage current, enhances carrier mobility, and maintains on-state current, thereby improving the overall performance of the semiconductor structure by alleviating doping-related issues.
Implementation Method 1
reduces electric field strength and Coulomb scattering, improving carrier mobility
Data Source
AI summary
Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a source doped region, a drain doped region, and a lightly doped region and an intrinsic region that are arranged adjacent to each other and located between the source doped region and the drain doped region. The lightly doped region is adjacent to the source doped region, and the intrinsic region is adjacent to the drain doped region. A doping concentration of the source doped region and the drain doped region is greater than a doping concentration of the lightly doped region.