Semiconductor Doping Structure for Low ON-Resistance Scaling
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Solution Overview
Problem
Current semiconductor devices face challenges in reducing device size and ON resistance, which affects power consumption and operating efficiency.
Innovation Solution
The semiconductor device incorporates a third doped region with a diffused structure and a non-linear sidewall, formed through dopant implantation and annealing processes, to reduce ON state resistance and device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If device size is reduced, then integration density improves, but ON resistance increases
Solution Approach 1:
The patent applies local quality by creating a third doped region with specific doping concentration between the first and second doped regions. This localized doping modification reduces ON resistance in the critical area between source and drain without requiring overall device enlargement, thus resolving the contradiction between device size reduction and ON resistance maintenance.
Solution Approach 2:
The patent changes the doping concentration parameter by introducing a third doped region with intermediate doping concentration between the heavily doped first and second regions. This parameter modification allows for optimized electrical characteristics that maintain low ON resistance in scaled-down devices.
2Loss of energy
If ON resistance is reduced, then power consumption decreases, but device complexity increases
Solution Approach 1:
The patent segments the doping structure into three distinct regions (first, second, and third doped regions) with different doping concentrations. This segmentation allows for optimized electrical performance and reduced power consumption while maintaining manageable manufacturing complexity through systematic doping processes.
3Reliability
If breakdown voltage is increased, then device reliability improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating a third doped region with specific doping concentration between the first and second doped regions. This localized doping modification reduces ON resistance in the critical area between source and drain without requiring overall device enlargement, thus resolving the contradiction between device size reduction and ON resistance maintenance.
Solution Approach 2:
The patent performs preliminary doping actions by forming the third doped region between the first and second doped regions before final device assembly. This preliminary structuring of doping concentrations optimizes both breakdown voltage and ON resistance characteristics, reducing the need for post-manufacturing adjustments and lowering precision requirements for subsequent steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in reduced power consumption and improved operating efficiency by minimizing ON state resistance and device size, while also increasing breakdown voltage.
Implementation Method 1
performing one or more doping processes to form a first doped region in the drain region, a second doped region in the source region, and a third doped region between the first doped region and the second doped region
Implementation Method 2
the third doped region comprises a diffused third doped region
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a semiconductor body and a transistor. The transistor includes a drain region in the semiconductor body, a first doped region in the drain region, a source region in the semiconductor body, a second doped region adjacent the source region, and a third doped region between the first doped region and the second doped region. The third doped region includes a first portion having a first concentration of dopants, a second portion adjacent the first portion and having a second concentration of dopants, a third portion adjacent the second portion and having a third concentration of dopants, and a fourth portion adjacent the third portion and having a fourth concentration of dopants. The first concentration is less than the second concentration. The second concentration is greater than the third concentration. The third concentration is less than the fourth concentration.