Semiconductor Doping via Particle Irradiation and Ion Implantation
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Solution Overview
Problem
Semiconductor doping processes face challenges in achieving precise and homogeneous doping, especially as wafer diameters and ingot lengths increase, leading to variations in conductivity type and device characteristics such as breakdown voltage and softness.
Innovation Solution
The method involves irradiating a semiconductor body with particles to generate vacancies, followed by implanting dopant ions that are activated as donors or acceptors, and then subjecting the body to thermal processing to diffuse and reallocate the dopants, thereby adjusting the dopant concentration and reducing variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional doping processes are used for larger wafer diameters and ingot lengths, then production capacity is increased, but doping precision and homogeneity deteriorate
Solution Approach 1:
The patent applies preliminary action by performing particle irradiation to generate vacancies in the semiconductor body before dopant ion implantation. This pre-prepared vacancy distribution ensures that subsequent dopant ions have predetermined sites to occupy, enabling precise and homogeneous doping even in larger wafers and ingots, thus maintaining doping precision while supporting increased production capacity
Solution Approach 2:
The patent uses vacancies generated by particle irradiation as an intermediary between the doping process and the final dopant distribution. These vacancies act as intermediate sites that guide and control the placement of dopant ions during implantation, ensuring uniform and precise doping concentrations throughout the semiconductor body, thereby resolving the contradiction between scaling up production and maintaining doping precision
2Productivity
If conventional doping processes are used for larger wafer diameters and ingot lengths, then device production is scaled up, but doping homogeneity deteriorates
Solution Approach 1:
The patent applies preliminary action by performing particle irradiation to generate vacancies in the semiconductor body before dopant ion implantation. This pre-prepared vacancy distribution ensures that subsequent dopant ions have predetermined sites to occupy, enabling precise and homogeneous doping even in larger wafers and ingots, thus maintaining doping precision while supporting increased production capacity
Solution Approach 2:
The patent achieves doping homogeneity by using particle irradiation to create a uniform distribution of vacancies throughout the semiconductor body. When dopant ions are implanted, they occupy these pre-distributed vacancies, resulting in a homogeneous dopant concentration profile. This approach ensures consistent doping quality across larger wafer diameters and ingot lengths, maintaining composition stability while enabling scaled-up device production
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a well-defined distribution of dopant concentrations, improving doping precision and reducing variations, which is essential for meeting device performance demands in larger semiconductor zones.
Implementation Method 1
irradiating the semiconductor body with particles. Thereby, vacancies are generated in the semiconductor body by lattice disturbance caused by the irradiation
Implementation Method 2
the semiconductor body is processed thermally. Thereby, the dopants introduced by ion implantation are caused to diffuse and reallocate
Implementation Method 3
implanting dopant ions into the semiconductor body, the dopant ions being configured to be activated as donors or acceptors
Data Source
AI summary
A method of forming a semiconductor device includes irradiating a semiconductor body with particles. Dopant ions are implanted into the semiconductor body such that the dopant ions are configured to be activated as donors or acceptors. Thereafter, the semiconductor body is processed thermally.