Semiconductor Device Doping Polarity Control
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Solution Overview
Problem
Current semiconductor devices, particularly those using direct band gap materials like III-V compounds, face challenges in achieving optimal performance due to limitations in doping processes and material polarity differences, which affect the formation of two-dimensional electron gases and the integration of high-electron-mobility transistors (HEMTs) and diodes.
Innovation Solution
A method involving the formation of semiconductor devices with a doped substrate and a doped semiconductor structure of different polarities, where a barrier layer with a higher band gap is used in conjunction with a channel layer, and ion implantation is employed to create a doped structure, enabling the formation of a heterojunction and controlling the two-dimensional electron gas (2DEG) formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation is used to dope the substrate, then doping precision is improved, but device complexity increases due to additional process steps and polarity management
Solution Approach 1:
The patent applies preliminary action by pre-doping the substrate with a first polarity before growing the semiconductor layers. This preliminary doping step establishes a foundation that simplifies subsequent processing, as the polarity configuration is determined early in the manufacturing process rather than requiring complex post-processing adjustments.
Solution Approach 2:
The patent utilizes parameter changes by varying the polarity of doped regions at different depths and locations within the device. By changing the doping polarity parameter (from first polarity in the substrate to second polarity in the doped semiconductor structure), the invention achieves precise control over electrical properties while managing the complexity through systematic parameter variation.
2Adaptability or versatility
If different polarity doped structures are integrated, then device functionality is improved, but manufacturing difficulty increases
Solution Approach 1:
The patent applies local quality by creating regions with different doping polarities at specific locations within the device. The substrate has a first polarity while the doped semiconductor structure has a second polarity, allowing each region to be optimized for its specific function. This localized differentiation enhances device functionality while the systematic approach to creating these regions manages manufacturing complexity.
3Manufacturing precision
If semiconductor layers are removed to expose substrate, then doping control is improved, but manufacturing time increases
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor structure into distinct layers (substrate, barrier layer, channel layer, doped semiconductor structure) with specific doping characteristics. This segmentation allows precise doping control in each region, as the etching process can be targeted to specific layers while preserving others, achieving good doping control without requiring complete removal of all semiconductor material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance of semiconductor devices by effectively forming and controlling 2DEG, improving the integration of HEMTs and diodes, and enabling better operational characteristics across various conditions.
Implementation Method 1
ion implanting a dopant into the exposed doped substrate to form a doped semiconductor structure
Implementation Method 2
a barrier layer with a higher band gap is used in conjunction with a channel layer, and ion implantation is employed to create a doped structure, enabling the formation of a heterojunction and controlling the two-dimensional electron gas (2DEG) formation
Data Source
AI summary
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a doped substrate; a barrier layer, disposed on the doped substrate; a channel layer, disposed between the doped substrate and the barrier layer; and a doped semiconductor structure, disposed in the doped substrate, where a band gap of the barrier layer is greater than a band gap of the channel layer, the doped substrate and the doped semiconductor structure have different polarities, and the doped substrate includes a doped silicon substrate.