Semiconductor Doping Profile Estimation via Signal Modeling
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Solution Overview
Problem
Current methods for determining doping concentrations in three-dimensional semiconductor structures are inefficient, particularly in miniaturized semiconductor devices, as they often rely on non-contact methods that do not accurately estimate doping profiles across multiple layers.
Innovation Solution
A method involving inputting a time-varying electric field signal into a semiconductor structure, comparing the output signal with a modeled signal to estimate doping concentrations, and using a three-dimensional model to determine the structure's doping profile, allowing for precise calculation of doping concentrations across layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If non-contact methods are used to determine doping concentration in three-dimensional semiconductor structures, then measurement can be performed without physical contact, but measurement precision is insufficient for accurately estimating doping profiles across multiple layers
Solution Approach 1:
The patent segments the semiconductor structure into multiple discrete layers, each with assigned doping concentrations. By dividing the continuous three-dimensional structure into discrete modeling layers, the method enables precise non-contact measurement of doping profiles across different depths, resolving the contradiction between non-contact capability and measurement precision.
Solution Approach 2:
The patent changes the parameter representation from continuous physical measurement to discrete doping concentration values assigned to each modeling layer. By parameterizing the doping profile as a set of discrete concentration values that can be independently adjusted and measured, the method achieves both non-contact operation and high measurement precision for three-dimensional doping characterization.
2Device complexity
If traditional methods are used for determining doping concentrations, then the process is simpler, but manufacturing precision of doping profiles is insufficient for miniaturized semiconductor devices
Solution Approach 1:
The patent transitions from two-dimensional doping profile measurement to three-dimensional characterization by adding the depth dimension with multiple modeling layers. This dimensional expansion enables precise control and measurement of doping concentrations throughout the vertical structure, achieving high manufacturing precision for miniaturized devices while maintaining a manageable process through systematic layer-by-layer analysis.
Solution Approach 2:
The patent creates a virtual copy of the semiconductor structure through modeling layers that replicate the physical layer stack. This digital twin approach allows precise doping profile determination by comparing measured signals against simulated responses from the modeled structure, achieving high manufacturing precision without overly complicating the actual measurement process.
3Measurement precision
If detailed three-dimensional modeling is performed to accurately estimate doping concentrations, then measurement precision improves, but calculation complexity and processing time increase
Solution Approach 1:
The patent segments the complex three-dimensional modeling problem into manageable two-dimensional cross-sectional models at different depths. By dividing the 3D structure into multiple 2D modeling layers, each with simplified geometry and doping assignments, the method achieves accurate doping concentration estimation while reducing overall calculation complexity through modular processing.
Solution Approach 2:
The patent uses a finite number of discrete modeling layers (e.g., 10-20 layers) rather than attempting continuous three-dimensional modeling. This partial action approach provides sufficient measurement precision for practical applications while significantly reducing calculation complexity and processing time compared to full continuous 3D simulations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate estimation and manufacturing of semiconductor devices with improved doping profiles, enhancing performance and reliability by precisely determining the three-dimensional structure and doping concentrations of semiconductor substrates.
Implementation Method 1
inputting a first input signal, which is a change over time of a first input electric field, into the measuring target, and measuring a first output signal which is a change over time of a first output electric field transmitted through or reflected by the first region
Data Source
AI summary
A method for manufacturing a semiconductor device with an improved doping profile is provided. The method includes providing a measuring target including a first region having a plurality of layers, inputting a first input signal into the measuring target and measuring a resulting first output signal, such as a change over time of a first output electric field that is transmitted through or reflected by the first region. Based on a first model including first structural information of a plurality of first modeling layers and information on doping concentrations of each of the plurality of first modeling layers, calculating a second output signal. When a result of comparing the first output signal with the second output signal is smaller than a threshold value, a three-dimensional model of the measuring target may be estimated based on the first model. Such non-destructive measurements may be used to determine manufacturing process parameters corresponding to ideal doping profiles and used to manufacture semiconductor devices implementing such manufacturing process parameters.