Semiconductor Body Doping via Proton Implantation and Field Stop Region
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Solution Overview
Problem
Semiconductor devices face challenges in improving electric characteristics while reducing device geometries, as thickness reduction leads to tradeoffs in breakdown voltage and cosmic ray performance, necessitating the inclusion of field stop regions to protect charge carrier plasma.
Innovation Solution
A method involving proton implantation and thermal annealing in a semiconductor body, using non-doping ions with an atomic number of at least 9, such as argon, to generate vacancies and enhance doping efficiency, allowing for targeted doping profiles and increased hydrogen-related donor concentrations without compromising homogeneity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the thickness of the semiconductor body is reduced to improve electric characteristics and reduce losses, then static and dynamic electric losses are reduced, but breakdown voltage and cosmic ray performance deteriorate
Solution Approach 1:
The patent introduces a field stop region with specific doping characteristics (n-type doping with concentration of 10^16 to 10^18 atoms/cm³) at a localized position between the drift region and the second surface. This local modification creates a transition region that manages electric field distribution, allowing the overall device to achieve both low losses and high breakdown voltage despite reduced thickness.
2Manufacturing precision
If conventional doping methods are used to create n-doped regions, then doping is achieved, but doping efficiency is low and high doses cause diffusion into drift regions
Solution Approach 1:
The patent uses a field stop region as an intermediary structure between the drift region and the n-doped region. This field stop region, with its specific doping concentration and depth positioning (5-20 µm from the second surface), acts as a buffer that confines the n-type doping within the desired region and prevents diffusion into the drift region, thereby improving doping profile control.
Solution Approach 2:
The patent employs ion implantation with specific parameters (ion type, energy, dose) to create the field stop region and n-doped regions. By carefully controlling the implantation energy and dose, the patent achieves precise doping profiles with concentrations of 10^16 to 10^18 atoms/cm³ at controlled depths, improving manufacturing precision while reducing the need for high doping doses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases doping efficiency, reduces the total dose required for n-doped regions, and allows for deeper penetration of proton-induced donors while minimizing diffusion into drift regions, thereby improving electric characteristics and blocking voltages in semiconductor devices.
Implementation Method 1
implanting protons through the second surface into the semiconductor body
Implementation Method 2
implanting ions through the second surface into the semiconductor body. The ions are ions of a non-doping element having an atomic number of at least 9
Implementation Method 3
processing the semiconductor body by thermal annealing
Implementation Method 4
introducing hydrogen through the second surface into the semiconductor body
Data Source
AI summary
A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. The method includes implanting protons through the second surface into the semiconductor body. The method further includes implanting ions through the second surface into the semiconductor body. The ions are ions of a non-doping element having an atomic number of at least 9. Thereafter, the method further includes processing the semiconductor body by thermal annealing.